Analytical expression for the bias and frequency-dependent capacitance of MOS varactors

被引：5
|
作者：
Gildenblat, G. [1 ]
Zhu, Z. [1 ]
Wu, W. [1 ]
机构：
[1] Arizona State Univ, Ira A Fulton Sch Engn, Dept Elect Engn, Tempe, AZ 85287 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 11期
关键词：
frequency dependence; MOS varactor; relaxation time approximation (RTA);
D O I：
10.1109/TED.2007.907134
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Relaxation time approximation is used to obtain an analytical expression for the frequency dependence of the capacitance of MOS varactors that are associated with the inertia of inversion layer formation.
引用
收藏
页码：3107 / 3108
页数：2
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