Formation of In-O films by Ar+ ion beam assisted reactive deposition

被引：7

作者：

Nakamura, I ^{[1
]}

Kamiya, M ^{[1
]}

Takano, I ^{[1
]}

Sawada, Y ^{[1
]}

Nakazawa, E ^{[1
]}

机构：

[1] Kogakuin Univ, Dept Elect Engn, Shinjuku Ku, Tokyo 16391, Japan

来源：

SURFACE & COATINGS TECHNOLOGY | 1998年 / 104卷

关键词：

Ar+ ion beam; In-O films; reactive deposition;

D O I：

10.1016/S0257-8972(98)00377-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electrical resistivity and transmissivity of In-O films prepared by Ar+ ion beam assisted reactive deposition were investigated. In this process, Ar+ ion beam irradiation with an energy of 10 keV was carried out simultaneously during In evaporation in an O-2 atmosphere. The In-O films prepared at several Ar+ ion current densities of 3-20 mu A cm(-2) showed a polycrystalline structure in the XRD measurement, which had a strongly preferred orientation of In2O3 (110). However, the XRD pattern of the In-O film prepared without Ar+ ion beam assistance corresponding to a reactive evaporation method showed a broad peak of In (101). Resistivity and transmissivity of this film prepared without Ar+ ion assist were 7.0 x 10(-4) Omega cm and about 35%, respectively. The resistivity of the film prepared with an Ar+ ion current density of 20 mu A cm(-2) increased to 0.05 Omega cm, while the transmissivity also increased to 80%. It is considered that the relationship of resistivity and transmissivity was dependent on the film composition and structure controlled by Ar+ ion irradiation. (C) 1998 Published by Elsevier Science S.A.

引用

页码：83 / 86

页数：4