BVCEO versus BVCBO for 4H and 6H Polytype SiC Bipolar Junction Transistors

被引：4
|
作者：
Balachandran, S [1 ]
Chow, TP
Agarwal, A
Scozzie, S
Jones, KA
机构：
[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
[2] Cree Inc, Durham, NC 27703 USA
[3] USA, Res Lab, SEDD, Adelphi, MD 20783 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷
关键词：
SiC; poly-type; ionization integral; impact ionization coefficient; bipolar junction transistor; breakdown;
D O I：
10.4028/www.scientific.net/MSF.483-485.893
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The letter presents a set of design curves that relate the open-base breakdown voltage BVCEO to the open emitter breakdown voltage BVCBO for 4H (0001 and 11-20 orientations) and 6H SiC NPN and PNP Bipolar Junction Transistors. We also present design curves pertaining to the variation of BVCEO with base doping and minority carrier diffusion length in the base for (0001) 4H-SiC BJTs for a 4x10(15) cm(-3) doped and 12 mu m thick drift layer for both NPN and PNP BJTs.
引用
收藏
页码：893 / 896
页数：4
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