Efficient 559.6 nm light produced by sum-frequency generation of diode-end-pumped Nd:YAG/SrWO4 Raman laser

被引：58

作者：

Duan, Y. M. ^{[1
,2
]}

Zhu, H. Y. ^{[1
,2
]}

Zhang, G. ^{[1
]}

Huang, C. H. ^{[1
]}

Wei, Y. ^{[1
,2
]}

Tu, C. Y. ^{[1
]}

Zhu, Z. J. ^{[1
]}

Yang, F. G. ^{[1
,2
]}

You, Z. Y. ^{[1
]}

机构：

[1] Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Optoelect Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing 100039, Peoples R China

来源：

LASER PHYSICS LETTERS | 2010年 / 7卷 / 07期

基金：

中国国家自然科学基金;

关键词：

diode-pumped laser; Raman laser; yellow-green; WAVELENGTH-VERSATILE; INTRACAVITY RAMAN; FLOW-CYTOMETRY; YELLOW-LIGHT; CRYSTALS;

D O I：

10.1002/lapl.201010017

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An efficient yellow-green laser at 559.6 nm based on the sum frequency generation of diode-end-pumped Nd:YAG/SrWO4 Raman laser is demonstrated. The 45 mm in length SrWO4 crystal grown by Czochralski method and the KTP crystal with a type-II critical phase matching (theta = 83.4 degrees, phi = 0 degrees) cut were adopted for Raman conversion and sum frequency generation, respectively. The maximum average power of 2.41 W was achieved at the incident pump power of 20.4 W and the pulse repetition rate of 60 kHz. The overall diode yellow conversion efficiency was 11.8% and the slope efficiency was about 24%. The results show that the critical pump power of resonator instability is increasing with the pulse repetition rate.

引用

页码：491 / 494

页数：4

共 33 条

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