Grazing angle x-ray diffraction analysis of Pb(Zr,Ti)O3 films

Pb(Zr,Ti)O-3 thin films were analyzed by grazing angle x-ray diffraction to obtain the phase assembly and orientation depth profile. PZT films between 0.33 and 1 mu m thick with a Zr/Ti ratio at 53/47 were deposited on platinum coated silicon substrates using 2-methoxyethanol based sol-gel processing and rapid thermal annealing. The ferroelectric and dielectric properties improved with increasing film thickness. While a strong (111)perovskite peak existed in ail of the films, thicker film showed a decrease in the relative intensity of the (111)peak relative to the (110)peak. By using grazing angle x-ray diffraction, it was shown that the surface of the films was randomly oriented, phase-pure perovskite, while the PZT near the bottom electrode was strongly (111) textured. The results suggest a strong influence of the substrate on the crystallization of the first layers to be annealed. However, a competitive nucleation and growth process arising either through the film thickness or at the film surface leads to the change in orientation with increasing film thickness.