Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC epilayers

被引：13

作者：

Thierry-Jebali, N. ^{[1
]}

Kawahara, C. ^{[1
]}

Miyazawa, T. ^{[2
]}

Tsuchida, H. ^{[2
]}

Kimoto, T. ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan

[2] Cent Res Inst Elect Power Ind CRIEPI, Yokosuka, Kanagawa 2400196, Japan

来源：

AIP ADVANCES | 2015年 / 5卷 / 03期

基金：

日本学术振兴会;

关键词：

EPITAXIAL-GROWTH; DEFECTS; DISLOCATIONS; REDUCTION;

D O I：

10.1063/1.4915128

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper deals with the description and the application of an original photoluminescence (PL) imaging technique on thick, lighly n-type doped 4H-SiC epilayers for in-grown stacking fault (SF) identification. This technique, call "photoluminescence imaging spectroscopy" (PLIS), compares different PL imaging pictures in order to create a new picture which displays the location and an approximation of the maximum photoemission wavelength of SFs at room temperature. Five types of SF have been detected and identified by PLIS on two different wafers. The origin of SF type modification during the growth is also discussed in this work. (C) 2015 Author(s).

引用

页数：12

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