Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC epilayers

被引：13

作者：

Thierry-Jebali, N. ^{[1
]}

Kawahara, C. ^{[1
]}

Miyazawa, T. ^{[2
]}

Tsuchida, H. ^{[2
]}

Kimoto, T. ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan

[2] Cent Res Inst Elect Power Ind CRIEPI, Yokosuka, Kanagawa 2400196, Japan

来源：

AIP ADVANCES | 2015年 / 5卷 / 03期

基金：

日本学术振兴会;

关键词：

EPITAXIAL-GROWTH; DEFECTS; DISLOCATIONS; REDUCTION;

D O I：

10.1063/1.4915128

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper deals with the description and the application of an original photoluminescence (PL) imaging technique on thick, lighly n-type doped 4H-SiC epilayers for in-grown stacking fault (SF) identification. This technique, call "photoluminescence imaging spectroscopy" (PLIS), compares different PL imaging pictures in order to create a new picture which displays the location and an approximation of the maximum photoemission wavelength of SFs at room temperature. Five types of SF have been detected and identified by PLIS on two different wafers. The origin of SF type modification during the growth is also discussed in this work. (C) 2015 Author(s).

引用

页数：12

共 50 条

[21] Single Shockley Stacking Faults in as-grown 4H-SiC Epilayers
Hassan, J.
Bergman, J. P.
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 327 - 330
[22] Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers
Mahadik, Nadeemullah A.
Stahlbush, Robert E.
Ancona, M. G.
Imhoff, Eugene A.
Hobart, Karl D.
Myers-Ward, Rachael L.
Eddy, Charles R., Jr.
Gaskill, D. Kurt
Kub, Fritz J.
APPLIED PHYSICS LETTERS, 2012, 100 (04)
[23] Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers
Miyano, Yutaro
Asafuji, Ryosuke
Yagi, Shuhei
Hijikata, Yasuto
Yaguchi, Hiroyuki
AIP ADVANCES, 2015, 5 (12):
[24] Analysis of carrier lifetimes in N plus B-doped n-type 4H-SiC epilayers
Yang, A.
Murata, K.
Miyazawa, T.
Tawara, T.
Tsuchida, H.
JOURNAL OF APPLIED PHYSICS, 2019, 126 (05)
[25] Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers
Nagano, Masahiro
Kamata, Isaho
Tsuchida, Hidekazu
SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 653 - 656
[26] Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers
Nagano, M.
Kamata, I.
Tsuchida, H.
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 313 - 318
[27] Examination of in-grown stacking faults in 8°- and 4°-offcut 4H-SiC epitaxy by photoluminescence imaging
Liu, Kendrick X.
Stahlbush, Robert E.
Lew, Kok-Keong
Myers-Ward, Rachael L.
Vanmil, Brenda L.
Gaskill, Kurt D.
Eddy, Charles R.
JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (05) : 730 - 735
[28] Examination of In-Grown Stacking Faults in 8°- and 4°-Offcut 4H-SiC Epitaxy by Photoluminescence Imaging
Kendrick X. Liu
Robert E. Stahlbush
Kok-Keong Lew
Rachael L. Myers-Ward
Brenda L. VanMil
Kurt D. Gaskill
Charles R. Eddy
Journal of Electronic Materials, 2008, 37 : 730 - 735
[29] Structural analysis and reduction of in-grown stacking faults in 4H-SiC epilayers
Izumi, S
Tsuchida, H
Kamata, I
Tawara, T
APPLIED PHYSICS LETTERS, 2005, 86 (20) : 1 - 3
[30] Optical and Structural Properties of In-grown Stacking Faults in 4H-SiC Epilayers
Hassan, J.
Henry, A.
Bergman, J. P.
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 307 - 310

← 1 2 3 4 5 →