N-Polar III-Nitride Green (540 nm) Light Emitting Diode

被引：83

作者：

Akyol, Fatih ^{[1
]}

Nath, Digbijoy N. ^{[1
]}

Gur, Emre ^{[1
,2
]}

Park, Pil Sung ^{[1
]}

Rajan, Siddharth ^{[1
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] Ataturk Univ, Fac Sci, Dept Phys, TR-25240 Erzurum, Turkey

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 05期

关键词：

MOLECULAR-BEAM EPITAXY; GROWTH; BLUE; INGAN; INN;

D O I：

10.1143/JJAP.50.052101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the demonstration of a N-polar InGaN based green light emitting diode (LED) grown by N-2 plasma-assisted molecular beam epitaxy (PAMBE). High quality multiple quantum well LEDs with In0.29Ga0.71N quantum wells were grown at a temperature of 600 degrees C by applying a new growth model. LED structures exhibited green emission, and electroluminescence measurements on the test structure showed peak emission wavelengths varying from 564.5 to 540 nm. The full width at half-maximum reduced from 74 to 63 nm as the drive current was increased to 180 A/cm(2). This work is the first demonstration of an N-polar LED with emission in the green wavelength range. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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