s-d exchange interaction induced magnetoresistance in magnetic ZnO

被引：63

作者：

Xu, Qingyu ^{[1
]}

Hartmann, Lars ^{[1
]}

Schmidt, Heidemarie ^{[1
]}

Hochmuth, Holger ^{[2
]}

Lorenz, Michael ^{[2
]}

Spemann, Daniel ^{[2
]}

Grundmann, Marius ^{[2
]}

机构：

[1] Forschungszentrum, Inst Ionenphys & Materialforsch, D-01328 Dresden, Germany

[2] Univ Leipzig, Fak Phys & Geowissensch, Inst Expt Phys 2, D-04103 Leipzig, Germany

来源：

PHYSICAL REVIEW B | 2007年 / 76卷 / 13期

关键词：

D O I：

10.1103/PhysRevB.76.134417

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The magnetoresistance (MR) effect in Co-doped ZnO films prepared by pulsed laser deposition on a-plane sapphire substrates with electron concentration at 5 K ranging from 8.3x10(17) cm(-3) to 9.9x10(19) cm(-3) has been studied experimentally and theoretically. A large positive MR of 124% has been observed in the film with the lowest electron concentration of 8.3x10(17) cm(-3), while only a negative MR of -1.9% was observed in the film with an electron concentration of 9.9x10(19) cm(-3) at 5 K. The positive MR is attributed to the quantum correction on the conductivity due to the s-d exchange interaction induced spin splitting of the conduction band. The negative MR is attributed to the magnetic field suppressed weak localization. The presented modeling of superimposed positive and negative MR well agrees with the experimentally observed MR and hints at the physical origin of MR in Co-doped ZnO.

引用

页数：4

共 19 条

[1] Spin-related magnetoresistance of n-type ZnO:Al and Zn1-xMnxO:Al thin films -: art. no. 121309 [J].

Andrearczyk, T ;

Jaroszynski, J ;

Grabecki, G ;

Dietl, T ;

Fukumura, T ;

Kawasaki, M .

PHYSICAL REVIEW B, 2005, 72 (12)

[2] ANOMALOUS VALUES OF INTERACTION CONSTANTS IN THE TWO-DIMENSIONAL ELECTRON-GAS OF A SILICON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR MEASURED BY PARALLEL-FIELD AND PERPENDICULAR-FIELD MAGNETOCONDUCTIVITY [J].

BURDIS, MS ;

DEAN, CC .

PHYSICAL REVIEW B, 1988, 38 (05) :3269-3275

[3] Magnetic scattering of spin polarized carriers in (In,Mn)Sb dilute magnetic semiconductor -: art. no. 227203 [J].

Csontos, M ;

Wojtowicz, T ;

Liu, X ;

Dobrowolska, M ;

Jankó, B ;

Furdyna, JK ;

Mihály, G .

PHYSICAL REVIEW LETTERS, 2005, 95 (22)

[4] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F ;

Cibert, J ;

Ferrand, D .

SCIENCE, 2000, 287 (5455) :1019-1022

[5]

EDWARDS PP, 2004, J CHEM SOC DA, P2995

[6] Magnetic oxide semiconductors [J].

Fukumura, T ;

Toyosaki, H ;

Yamada, Y .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (04) :S103-S111

[7] Spin polarization in Zn0.95Co0.05O:(Al,Cu) thin films [J].

Hartmann, Lars ;

Xu, Qingyu ;

Schmidt, Heidemarie ;

Hochmuth, Holger ;

Lorenz, Michael ;

Sturm, Chris ;

Meinecke, Christoph ;

Grundmann, Marius .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (23) :4920-4924

[8] Spin interactions in diluted magnetic semiconductors and magnetic semiconductor structures [J].

Kacman, P .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (04) :R25-R39

[9] DISORDERED ELECTRONIC SYSTEMS [J].

LEE, PA ;

RAMAKRISHNAN, TV .

REVIEWS OF MODERN PHYSICS, 1985, 57 (02) :287-337

[10] Ferromagnetism of ZnO and GaN:: A review [J].

Liu, C ;

Yun, F ;

Morkoç, H .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2005, 16 (09) :555-597

← 1 2 →