Study of nitrogen incorporation in 6H-SiC single crystals grown by PVT

被引：17

作者：

Schulz, D ^{[1
]}

Irmscher, K ^{[1
]}

Dolle, J ^{[1
]}

Eiserbeck, W ^{[1
]}

Müller, T ^{[1
]}

Rost, HJ ^{[1
]}

Siche, D ^{[1
]}

Wagner, G ^{[1
]}

Wollweber, J ^{[1
]}

机构：

[1] Inst Kristallzuchtung, DE-12489 Berlin, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

6H polytype; nitrogen concentration; seed orientation; sublimation bulk growth;

D O I：

10.4028/www.scientific.net/MSF.338-342.87

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The incorporation of nitrogen during single crystal growth of silicon carbide via the vapour phase has been studied in the concentration range of 3(.)10(17) cm(-3) less than or equal to c(N) less than or equal to 3(.)10(19) cm(-3). The nitrogen concentration was measured by secondary ion mass spectrometry (SIMS) and the net doping concentration by capacitance-voltage measurements (CV). In general with increasing the ratio N-2/(N-2+Ar) the nitrogen concentration in the crystals also increases resulting in a function of the square root of nitrogen partial pressure. Furthermore the influence of the seed orientation on the nitrogen level was investigated.

引用

页码：87 / 90

页数：4

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