Synthesis and electrical properties of CuNi0.5Ti0.5O2

被引：11
作者：
Marquardt, MA [1 ]
Cann, DP [1 ]
机构：
[1] Iowa State Univ, Dept Mat Sci & Engn, Ames, IA 50011 USA
来源：
MATERIALS LETTERS | 2006年 / 60卷 / 01期
关键词：
delafossite; electroceramics; electrical properties;
D O I：
10.1016/j.matlet.2005.07.089
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper presents structural and electrical data on the delafossite compound CuNi0.5Ti0.5O2, Ceramics of CuNi0.5Ti0.5O2 Were prepared via solid state synthesis techniques in a controlled atmosphere of pO(2) = 10(-3) atm. The compound crystallized into the 3R delafossite phase with hexagonal lattice parameters of a = 3.0079 (+/- 0.0004) angstrom and c = 17.2543 (+/- 0.003) angstrom. The electrical properties of the material are characterized by a room temperature conductivity of 2 x 10(-6) S/cm. The conductivity exhibits an Arrhenius-like temperature dependence with an activation energy of 0.48 eV. (C) 2005 Elsevier B.V. All rights reserved.
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收藏
页码：81 / 85
页数：5
相关论文
共 21 条
[1]   THE OPTICAL INTERBAND-TRANSITIONS OF THE SEMICONDUCTOR CUGAO2 [J].
BENKO, FA ;
KOFFYBERG, FP .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 94 (01) :231-234
[2]  
DARRIET J, 1986, REV CHIM MINER, V23, P318
[3]   CRYSTAL-GROWTH AND ELECTRICAL-PROPERTIES OF CUFEO2 SINGLE-CRYSTALS [J].
DORDOR, P ;
CHAMINADE, JP ;
WICHAINCHAI, A ;
MARQUESTAUT, E ;
DOUMERC, JP ;
POUCHARD, M ;
HAGENMULLER, P .
JOURNAL OF SOLID STATE CHEMISTRY, 1988, 75 (01) :105-112
[4]   SOME NEW COMPOUNDS WITH DELAFOSSITE STRUCTURE [J].
DOUMERC, JP ;
AMMAR, A ;
WICHAINCHAI, A ;
POUCHARD, M ;
HAGENMULLER, P .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1987, 48 (01) :37-43
[5]   Mossbauer study and magnetic properties of CuFe1-xGaxO2 [J].
El Ataoui, K ;
Doumerc, JP ;
Ammar, A ;
Fournès, L ;
Wattiaux, A ;
Grenier, JC ;
Pouchard, M .
JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 368 (1-2) :79-83
[6]   Synthesis and characterization of the new delafossite-type oxide CuNi1/3V2/3O2 [J].
El Ataoui, K ;
Doumerc, JP ;
Ammar, A ;
Grenier, JC ;
Dordor, P ;
Pouchard, M .
COMPTES RENDUS CHIMIE, 2004, 7 (01) :29-34
[7]   Preparation, structural characterization and Mossbauer study of the CuFe1-xVxO2 (0 ≤ x ≤ 0.67) delafossite-type solid solution [J].
El Ataoui, K ;
Doumerc, JP ;
Ammar, A ;
Gravereau, P ;
Fournès, L ;
Wattiaux, A ;
Pouchard, M .
SOLID STATE SCIENCES, 2003, 5 (09) :1239-1245
[8]  
Gall RB, 2003, CERAM ENG SCI PROC, V24, P143
[9]   Nanocrystalline p-type transparent Cu-Al-O semiconductor prepared by chemical-vapor deposition with Cu(acac)2 and Al(acac)3 precursors [J].
Gong, H ;
Wang, Y ;
Luo, Y .
APPLIED PHYSICS LETTERS, 2000, 76 (26) :3959-3961
[10]   Electronic structure and small polaron hole transport of copper aluminate [J].
Ingram, BJ ;
Mason, TO ;
Asahi, R ;
Park, KT ;
Freeman, AJ .
PHYSICAL REVIEW B, 2001, 64 (15) :1551141-1551147
123