Oxygen-related micro-defects in Czochralski silicon annealed at enhanced stress conditions

被引：6
|
作者：
Misiuk, A
Surma, HB
Lopez, M
机构：
[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
[2] Inst Elect Mat Technol, PL-01919 Warsaw, Poland
[3] Univ Barcelona, E-08028 Barcelona, Spain
来源：
INTERNATIONAL JOURNAL OF INORGANIC MATERIALS | 2001年 / 3卷 / 08期
关键词：
Cz-Si; annealing; hydrostatic pressure; oxygen; precipitation; oxygen-related defects;
D O I：
10.1016/S1466-6049(01)00125-8
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
Effect of enhanced (up to 1.2 GPa) hydrostatic argon pressure on creation of oxygen-related micro-defects (such as oxygen clusters, OC's, and precipitates, OP's) in Cz-Si during high temperature-high pressure treatment, HT-HP, at up to 1400 K, was investigated by chemical selective etching, FTIR, and photoluminescence, PL, methods. Cz-Si contained interstitial oxygen, O-i, with a concentration, c(0), up to 1.1 X 10(18) cm(3); prior to the HT-HP treatment some samples were pre-annealed at (720, 830) K-10(5) Pa to create nucleation centres for O-i precipitation. The HT-HP treatment results in decrease of c(0), revealing defect-related PL bands and enhanced (in comparison to effect of annealing at 10(5) Pa) creation of oxygen-related micro-defects. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1197 / 1199
页数：3
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