Supercritical-carbon dioxide-assisted cyclic deposition of metal oxide and metal thin films

被引：10
|
作者：
Barua, D [1 ]
Gougousi, T [1 ]
Young, ED [1 ]
Parsons, GN [1 ]
机构：
[1] N Carolina State Univ, Raleigh, NC 27695 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 09期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2181651
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thin films of aluminum oxide and palladium were deposited on silicon at low temperatures (70-120 degrees C) by a cyclic adsorption/reaction processes using supercritical CO2 solvent. Precursors included Al(hfac)(3), Al(acac)(3), and Pd(hfac)(2), and aqueous H2O2, tert-butyl peracetate, and H-2 were used as the oxidants or reductants. For the precursors studied, growth proceeds through a multilayer precursor adsorption in each deposition cycle, and film thickness increased linearly with the number of growth cycles.
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页数：3
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