Growth Modes of GaN Plasma-Assisted MBE Nanowires

被引：0

作者：

Berdnikov, Yu. S. ^{[1
]}

Sibirev, N. V. ^{[2
]}

机构：

[1] ITMO Univ, St Petersburg 197101, Russia

[2] St Petersburg State Univ, St Petersburg 198504, Russia

来源：

SEMICONDUCTORS | 2018年 / 52卷 / 16期

关键词：

MOLECULAR-BEAM EPITAXY;

D O I：

10.1134/S1063782618160042

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Within this work we study the plasma-assisted molecular beam epitaxy of GaN on Si(111) substrate at different substrate temperatures and III/V flux ratios. We present the model, which gives the analytical expressions for the boundaries between the three growth modes: compact layer, nanowires, and absence of growth. We extract the activation energy for nucleation of GaN nanowires on the Si(111) from the model fitting to experimental data.

引用

页码：2085 / 2087

页数：3

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