Fabrication of nanogap electrodes via nano-oxidation mask by scanning probe microscopy nanolithography

In this study, a simple technique was introduced for the fabrication of nanogap electrodes by using nano-oxidation scanning probe microscopy lithography with a Cr/Pt coated silicon tip. Silicon electrodes with a gap of sub-31 nm were fabricated successfully by this technique. The current-voltage measurements (I-V) of the electrodes demonstrated excellent insulating characteristics. This technique is simple, controllable, inexpensive, and faster than common methods. The results showed that silicon electrodes have a great potential for the fabrication of single molecule transistors, single electron transistors, and other nanoelectronic devices. (C) 2011 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI:10.1117/1.3643480]