GaN and AlGaN ultraviolet detectors

被引：0
|
作者：
Shur, MS [1 ]
Khan, MA
机构：
[1] Rensselaer Polytech Inst, Ctr Integrated Elect & Electron Mfg, Troy, NY 12181 USA
[2] Rensselaer Polytech Inst, Dept Elect & Comp Syst Engn, Troy, NY USA
[3] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
来源：
GALLIUM NITRIDE (GAN) II | 1999年 / 57卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：407 / 439
页数：33
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