Surface and Step Conductivities on Si(111) Surfaces

被引：37

作者：

Just, Sven ^{[1
,2
]}

Blab, Marcus ^{[1
,2
]}

Korte, Stefan ^{[1
,2
]}

Cherepanov, Vasily ^{[1
,2
]}

Soltner, Helmut ^{[3
]}

Voigtlaender, Bert ^{[1
,2
]}

机构：

[1] Forschungszentrum Julich, Peter Grunberg Inst PGI 3, D-52425 Julich, Germany

[2] Forschungszentrum Julich, JARA Fundamentals Future Informat Technol, D-52425 Julich, Germany

[3] Forschungszentrum Julich, Cent Inst Engn Elect & Analyt ZEA 1, D-52425 Julich, Germany

来源：

PHYSICAL REVIEW LETTERS | 2015年 / 115卷 / 06期

关键词：

VACUUM; BORON;

D O I：

10.1103/PhysRevLett.115.066801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Four-point measurements using a multitip scanning tunneling microscope are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first step, distance-dependent four-point measurements in the linear configuration are used in combination with an analytical three-layer model for charge transport to disentangle the 2D surface conductivity from nonsurface contributions. A termination of the Si(111) surface with either Bi or H results in the two limiting cases of a pure 2D or 3D conductance, respectively. In order to further disentangle the surface conductivity of the step-free surface from the contribution due to atomic steps, a square four-probe configuration is applied as a function of the rotation angle. In total, this combined approach leads to an atomic step conductivity of sigma(step) = (29 +/- 9) Omega(-1) m(-1) and to a step-free surface conductivity of sigma(surf) = (9 +/- 2) x 10(-6) Omega(-1)/square for the Si(111)-(7 x 7) surface.

引用

页数：5

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