Surface and Step Conductivities on Si(111) Surfaces

被引:37
作者
Just, Sven [1 ,2 ]
Blab, Marcus [1 ,2 ]
Korte, Stefan [1 ,2 ]
Cherepanov, Vasily [1 ,2 ]
Soltner, Helmut [3 ]
Voigtlaender, Bert [1 ,2 ]
机构
[1] Forschungszentrum Julich, Peter Grunberg Inst PGI 3, D-52425 Julich, Germany
[2] Forschungszentrum Julich, JARA Fundamentals Future Informat Technol, D-52425 Julich, Germany
[3] Forschungszentrum Julich, Cent Inst Engn Elect & Analyt ZEA 1, D-52425 Julich, Germany
关键词
VACUUM; BORON;
D O I
10.1103/PhysRevLett.115.066801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Four-point measurements using a multitip scanning tunneling microscope are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first step, distance-dependent four-point measurements in the linear configuration are used in combination with an analytical three-layer model for charge transport to disentangle the 2D surface conductivity from nonsurface contributions. A termination of the Si(111) surface with either Bi or H results in the two limiting cases of a pure 2D or 3D conductance, respectively. In order to further disentangle the surface conductivity of the step-free surface from the contribution due to atomic steps, a square four-probe configuration is applied as a function of the rotation angle. In total, this combined approach leads to an atomic step conductivity of sigma(step) = (29 +/- 9) Omega(-1) m(-1) and to a step-free surface conductivity of sigma(surf) = (9 +/- 2) x 10(-6) Omega(-1)/square for the Si(111)-(7 x 7) surface.
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页数:5
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