Fabrication of triode field emission display using metal-gate-plate

被引：0
作者：
Yang, G. W. [2 ]
Chen, Jun [1 ]
Huang, J. X. [2 ]
Deng, S. Z. [2 ]
She, J. C. [2 ]
Xu, N. S. [2 ]
机构：
[1] Sun Yat Sen Zhongshan Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[2] Sun Yat Sen Zhongshan Univ, Sch Phys & Engn, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
来源：
2007 IEEE 20TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：117 / +
页数：2
相关论文
共 50 条
[41]   Simulation of field emission behavior from multiple carbon nanotubes in an integrated gate triode configuration [J].
Khaneja, Mamta ;
Ghosh, Santanu ;
Chaudhury, P. K. ;
Kumar, Vikram .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2014, 63 :268-271
[42]   Fabrication of field emission display prototype based an Si field emission arrays with diamond coating [J].
Givargizov, EI ;
Zhirnov, VV ;
Chubun, NN ;
Stepanova, AN .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (02) :450-453
[43]   Diamond field-emission triode with low gate turn-on voltage and high gain [J].
Wisitora-at, A ;
Kang, WP ;
Davidson, JL ;
Kerns, DV ;
Fisher, TS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (01) :614-617
[44]   Nanogap fabrication on palladium electrodes for field emission display applications [J].
Tsai, Chih-Hao ;
Chen, Kuan-Jung ;
Pan, Fu-Ming ;
Lo, Hsiang-Yu ;
Li, Yiming ;
Liu, Mei ;
Mo, Chi-Neng .
2007 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXVIII, BOOKS I AND II, 2007, 38 :583-+
[45]   Development of the parallel-gate structure of ZnO field emission display [J].
Lin Z. ;
Guo T. ;
Zhang T. .
Guangxue Xuebao/Acta Optica Sinica, 2010, 30 (02) :518-524
[46]   Architecture of field emission display based on a gate electrode of diabolo mode [J].
Yang, Xiaxi ;
Zhang, Xiaobing ;
Lei, Wei ;
Zhang, Zichen ;
Chen, Jing ;
Zhang, Lifang .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (02) :623-626
[47]   Fabrication of a lateral field emission triode with a high current density and high transconductance using the local oxidation of the polysilicon layer [J].
Park, SS ;
Park, DI ;
Hahm, SH ;
Lee, JH ;
Choi, HC ;
Lee, JH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (06) :1283-1289
[48]   Analysis of the electron emission characteristics and working mechanism of a planar bottom gate vacuum field emission triode with a nanoscale channel [J].
Wang, Xiao ;
Xue, Tao ;
Shen, Zhihua ;
Long, Minggang ;
Wu, Shengli .
NANOSCALE, 2021, 13 (34) :14363-14370
[49]   Optimization design and fabrication of annular field emitter for field emission display panel [J].
Wu, Chao ;
Jin, Xiaofeng .
MATERIALS, MECHATRONICS AND AUTOMATION, PTS 1-3, 2011, 467-469 :1520-+
[50]   Fabrication of ZnO Nanowire Field Emitter arrays for Field Emission Display Application [J].
Huang, K. ;
Ke, Y. L. ;
Zhang, G. F. ;
Chen, Jun ;
Deng, S. Z. ;
Xu, N. S. .
PROCEEDINGS OF CHINA DISPLAY/ASIA DISPLAY 2011, 2011, :719-721
12345