Protection circuit for high power amplifiers operating under mismatch conditions

被引：0

作者：

van der Bent, G. ^{[1
]}

van Wanurn, M. ^{[1
]}

de Hek, A. P. ^{[1
]}

van der Graaf, M. W. ^{[1
]}

van Vliet, F. E. ^{[1
]}

机构：

[1] TNO Def Secur & Safety, NL-2509 JG The Hague, Netherlands

来源：

2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2 | 2007年

关键词：

MMICs; power amplifiers; protection;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A protection circuit is developed which protects transistors in the output stage of a High Power Amplifier against voltage breakdown as a result of mismatch. The circuit is applied in an S-band and X-band High Power Amplifier and measured under various mismatch conditions. The devices have been developed in the 6-inch 0.5 mu m GaAs power pHEMT process (PP50-11) of WIN Semiconductors.

引用

页码：422 / 425

页数：4

共 4 条

[1]

BEZOOIJEN A, 2006, P 36 EUR MICR C MANC

[2]

CHOU YC, 2005, P IEEE IMS2005

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La Paglia, L ;

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IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (03) :611-621

[4] A 3.2-V operation single-chip dual-band AlGaAs/GaAs HBT MMIC power amplifier with active feedback circuit technique [J].

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Mori, K ;

Asada, T ;

Okuda, T ;

Inoue, A ;

Miura, T ;

Chomei, K ;

Hattori, R ;

Yamanouchi, M ;

Shimura, T .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (08) :1109-1120

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