Pointed Cone Shaped Light-Emitting Diodes Based on ZnO/GaN Wafer Bonding

被引：1

作者：

Murai, Akihiko ^{[1
]}

Thompson, Daniel B. ^{[1
]}

Hirasawa, Hirohiko ^{[1
]}

Fellows, Natalie ^{[1
]}

Brinkley, Stuart ^{[1
]}

Won, Choi Joo ^{[1
]}

Iza, Michael ^{[1
]}

Mishra, Umesh K. ^{[1
]}

Nakamura, Shuji ^{[1
]}

DenBaars, Steven P. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 05期

关键词：

ZnO; GaN; wafer bonding; light-emitting diode; laser lift off; optical power; external quantum efficiency; electroluminescence;

D O I：

10.1143/JJAP.47.3522

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on pointed cone shaped blue light-emitting diodes (LEDs) based on ZnO and GaN wafer bonding. After wafer bonding of an n-type ZnO substrate to a III-nitride LED wafer, sapphire was removed and n- and P-pads were formed on the same side. Pointed hexagonal ZnO cone was formed by a selective chemical etching method. The output power and external quantum efficiency (EQE) were 24.4 mW and 43.6%, respectively, at a dc forward current of 20 mA. [DOI: 10.1143/JJAP.47.3522]

引用

页码：3522 / 3523

页数：2

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