Regrowth of quantum cascade laser active regions on metamorphic buffer layers

被引：7

作者：

Rajeev, A. ^{[1
]}

Mawst, L. J. ^{[1
]}

Kirch, J. D. ^{[1
]}

Botez, D. ^{[1
]}

Miao, J. ^{[2
]}

Buelow, P. ^{[2
]}

Kuech, T. F. ^{[2
]}

Li, Xiaoqing ^{[3
]}

Sigler, C. ^{[1
]}

Babcock, S. E. ^{[3
]}

Earles, T. ^{[4
]}

机构：

[1] Univ Wisconsin, Dept Elect & Comp Engn, 1415 Johnson Dr, Madison, WI 53706 USA

[2] Univ Wisconsin, Dept Chem & Biol Engn, 1415 Johnson Dr, Madison, WI 53706 USA

[3] Univ Wisconsin, Dept Mat Sci & Engn, 1415 Johnson Dr, Madison, WI 53706 USA

[4] Intraband LLC, Madison, WI 53726 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2016年 / 452卷

基金：

美国国家科学基金会;

关键词：

Superlattice; Quantum cascade lasers; Metalorganic vapor phase epitaxy; Semiconducting III-V materials; EPITAXY;

D O I：

10.1016/j.jcrysgro.2016.01.029

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Metamorphic buffer layers (MBLs) were used as substrates with lattice constants selected for designing and fabricating intersubband transition sources involving strained superlattices (SLs) such as Quantum Cascade Lasers (QCLs). Chemical mechanical planarization (CMP) was used to prepare the InGaAs-based MBLs for epitaxial growth. Indium enrichment of the InGaAs layer on the MBL surfaces was observed when annealed at the regrowth temperatures. This post-anneal enhancement was eliminated by including a wet-etch treatment after CMP, which results in an epi-ready surface for regrowth. Ten stages of a QCL core region structure, designed for emission at a 3.4 m wavelength are regrown on a surface optimized MBL. Such structures exhibit well defined X-ray diffraction pendellosung fringes, and transmission electron microscopy confirms planar superlattice interfaces with layer thicknesses that are in good agreement with the design target. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：268 / 271

页数：4

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