Soft phonon modes driven reduced thermal conductivity in self-compensated Sn1.03Te with Mn doping

被引:73
作者
Acharya, Somnath [1 ]
Pandey, Juhi [1 ]
Soni, Ajay [1 ]
机构
[1] Indian Inst Technol Mandi, Sch Basic Sci, Mandi 175001, Himachal Prades, India
关键词
HIGH THERMOELECTRIC PERFORMANCE; VALENCE-BAND CONVERGENCE; RAMAN-SCATTERING; NANOPLATELET COMPOSITES; BULK THERMOELECTRICS; TO-PHONON; SNTE; TRANSPORT; PBTE; NANOSTRUCTURES;
D O I
10.1063/1.4963728
中图分类号
O59 [应用物理学];
学科分类号
摘要
The key challenge for superior thermoelectric performance of SnTe is optimization of very high hole concentration (similar to 10(21) cm(-3)) arising from inherent Sn vacancies. Partial control of charge carriers can be achieved by self-compensation via careful filling of the vacancies using excess Sn, although high thermal conductivity remained a concern. In this context, with deliberate doping, an anharmonicity in phonon dispersion can be generated to obtain a poor thermal conductivity. We report on point defects and soft phonon mode driven poor thermal conductivity in self-compensated Sn1.03Te with Mn doping. The obvious modification in the electronic band structure has been demonstrated by four times enhancement in thermopower for Sn0.93Mn0.1Te from Sn1.03Te, and metallic behavior of temperature dependent resistivity. The observed soft phonon mode and impurity localized mode in Raman spectra have been explained based on the created anharmonicity in Sn1.03Te crystal with Mn doping. Published by AIP Publishing.
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页数:5
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