Impact ionization processes in quantum well infrared photodetector structures

被引：23

作者：

Gendron, L ^{[1
]}

Berger, V

Vinter, B

Costard, E

Carras, M

Nedelcu, A

Bois, P

机构：

[1] Thales Res & Technol, Domaime Corbeville, F-91404 Orsay, France

[2] Univ Paris 07, F-75251 Paris, France

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 02期

关键词：

D O I：

10.1088/0268-1242/19/2/016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The importance of impact ionization processes on the electronic transport in quantum well infrared photodetectors (QWIPs) is experimentally and theoretically investigated. Dark and optical current analysis in AlxGa1-xAs/GaAs-QWIP structures in which the first barrier thickness or the number of wells is varied leads to the conclusion that, under normal QWIP bias conditions, impact ionization processes occur only in the first two periods and not in the entire structure.

引用

页码：219 / 223

页数：5

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