Computer-aided band gap engineering and experimental verification of amorphous silicon-germanium solar cells

被引：32
|
作者：
Zambrano, RJ
Rubinelli, FA
Arnoldbik, WM
Rath, JK
Schropp, REI
机构：
[1] Univ Utrecht, Debye Res Inst, Dept Atom & Interface Phys, SID Phys Devices, NL-3508 TA Utrecht, Netherlands
[2] Univ Nacl Litoral, INTEC, RA-3000 Santa Fe, Argentina
[3] Univ Utrecht, Debye Res Inst, SID Funct Mat, NL-3508 TA Utrecht, Netherlands
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2004年 / 81卷 / 01期
关键词：
band gap design; a-SiGe : H; solar cells; Ge diffusion;
D O I：
10.1016/j.solmat.2003.08.017
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
A new band gap profile (exponential profile) for the active layer of the a-SiGe:H single junction cell has been designed and experimentally demonstrated. By computer simulations we show how bending the grading of the band gap in the i-layer contributes to the enhancement of the carrier collection, improving the fill factor and efficiency. The differences observed between experiments and simulations are studied using Rutherford Backscattering Spectrometry (RBS). The results highlight weak points during the deposition process, whose control enables us to bring together experimental and computational results. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：73 / 86
页数：14
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