Emission characteristics of InGaN multi quantum well light emitting diodes with differently strained InAlGaN barriers

被引：9

作者：

Kolbe, T. ^{[1
]}

Knauer, A. ^{[2
]}

Wenzel, H. ^{[2
]}

Einfeldt, S. ^{[2
]}

Kueller, V. ^{[2
]}

Vogt, P. ^{[1
]}

Weyers, M. ^{[2
]}

Kneissl, M. ^{[1
,2
]}

机构：

[1] Tech Univ Berlin, Inst Solid State Phys, Hardenbergstr 36, D-10623 Berlin, Germany

[2] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷

关键词：

D O I：

10.1002/pssc.200880895

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper we report on the emission characteristics of InGaN multi quantum well light emitting diodes (LEDs) in the near ultra-violet (UV) spectral range. GaN, AlGaN and InAlGaN with various indium contents were compared as barrier material in the InGaN quantum well active region of the device heterostructure. It was found that the emission wavelength decreases with increasing drive current. This blue shift with an increasing indium content in the quaternary barriers can be attributed to the screening of the polarization fields and band gap renormalization. Light emitting diodes with a constant emission wavelength over a wide current range were realized by using nearly lattice matched InAlGaN barriers. These devices also showed the highest light output power even though the band offset between the quantum wells and the barriers is smaller in comparison to the LEDs with the AlGaN barriers. These effects can be explained by the interplay of a reduction defect density at the quantum well/barrier interface and a improved overlap of the electron and hole wave functions due to the reduction of quantum confined Stark effect. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：S889 / S892

页数：4

共 7 条

[1] THE INFLUENCE OF THE STRAIN-INDUCED ELECTRIC-FIELD ON THE CHARGE-DISTRIBUTION IN GAN-ALN-GAN STRUCTURE [J].

BYKHOVSKI, A ;

GELMONT, B ;

SHUR, M .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (11) :6734-6739

[2] Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures [J].

Della Sala, F ;

Di Carlo, A ;

Lugli, P ;

Bernardini, F ;

Fiorentini, V ;

Scholz, R ;

Jancu, JM .

APPLIED PHYSICS LETTERS, 1999, 74 (14) :2002-2004

[3]

GOTO O, 2007, P SOC PHOTO-OPT INS, V6485, pZ8501

[4] Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diodes [J].

Knauer, A. ;

Kueller, V. ;

Einfeldt, S. ;

Hoffmann, V. ;

Kolbe, T. ;

van Look, J. -R. ;

Piprek, J. ;

Weyers, M. ;

Kneissl, M. .

MANUFACTURING LEDS FOR LIGHTING AND DISPLAYS, 2007, 6797

[5] Effect of the barrier composition on the polarization fields in near UVInGaN light emitting diodes [J].

Knauer, A. ;

Wenzel, H. ;

Kolbe, T. ;

Einfeldt, S. ;

Weyers, M. ;

Kneissl, M. ;

Traenkle, G. .

APPLIED PHYSICS LETTERS, 2008, 92 (19)

[6] Quantum-confined stark effect due to piezoelectric fields in GaInN strained quantum wells [J].

Takeuchi, T ;

Sota, S ;

Katsuragawa, M ;

Komori, M ;

Takeuchi, H ;

Amano, H ;

Akasaki, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (4A) :L382-L385

[7] Accurate modelling of InGaN quantum wells [J].

Wenzel, Hans .

OPTICAL AND QUANTUM ELECTRONICS, 2006, 38 (12-14) :953-961

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