Room-temperature local magnetoresistance effect in n-Ge devices with low-resistive Schottky-tunnel contacts

被引：13

作者：

Tsukahara, Makoto ^{[1
]}

Yamada, Michihiro ^{[1
]}

Naito, Takahiro ^{[1
]}

Yamada, Shinya ^{[1
,2
]}

Sawano, Kentarou ^{[3
]}

Lazarov, Vlado K. ^{[4
]}

Hamaya, Kohei ^{[1
,2
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, 1-3 Machikaneyama, Toyonaka, Osaka 5608531, Japan

[2] Osaka Univ, Ctr Spintron Res Network, 1-3 Machikaneyama, Toyonaka, Osaka 5608531, Japan

[3] Tokyo City Univ, Adv Res Labs, 8-15-1 Todoroki, Tokyo 1580082, Japan

[4] Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

ELECTRICAL DETECTION; SPIN TRANSPORT; SEMICONDUCTORS;

D O I：

10.7567/1882-0786/ab0252

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two-terminal local magnetoresistance (MR) effect in n-type germanium (Ge) based lateral spin-valve (LSV) devices can be observed at room temperature. By using phosphorus delta-doped Heusler-alloy/Ge Schottky-tunnel contacts, the resistance-area product of the contacts is able to be less than 0.20 k Omega mu m(2), which is the lowest value in semiconductor based LSV devices. From the one-dimensional spin drift-diffusion model, the interface spin polarization of the Heusler-alloy/Ge contacts in the present LSV devices can be estimated to be similar to 0.018 at room temperature. We experimentally propose that it is important for enhancing the local MR ratio in n-Ge based LSV devices to improve the interface spin polarization of the Heusler-alloy/Ge contacts. (C) 2019 The Japan Society of Applied Physics

引用

页数：4

共 28 条

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