Weak and Strong SRAM cells analysis in embedded memories for PUF applications

被引:6
|
作者
Alheyasat, A. [1 ]
Torrens, G. [1 ]
Bota, S. [1 ]
Alorda, B. [1 ]
机构
[1] Univ Balearic Isl, Phys Dept, Ctra Valldemossa,Km 7-5, Palma De Mallorca, Spain
关键词
Embedded memories; SRAM PUF; reliability analysis; cells identification;
D O I
10.1109/dcis201949030.2019.8959939
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The deployment of IoT platforms for SmartCity applications is demanding solutions to assure security and integrity levels. In this context, physical unclonable functions (PUF) may overcome the security drawbacks of storing the security key in a non-volatile memory. The existence of SRAM in embedded systems has driven the implementation of PUF solutions using memory circuit as entropy sources. The use of a non-specific memory design requires the need of identify the adequate cells useful for PUF applications. This work proposes a new methodology to distinguish the adequate cells based on mismatch factor calculation. The mismatch analysis using physical and performance parameters shows the viability of the selection methodology and computes the robustness of the responses in terms of probability of error in the start-up value.
引用
收藏
页数:6
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