Phase composition of selenized Cu2ZnSnSe4 thin films determined by X-ray diffraction and Raman spectroscopy

被引:67
作者
Ganchev, M. [1 ]
Iljina, J. [1 ]
Kaupmees, L. [1 ]
Raadik, T. [1 ]
Volobujeva, O. [1 ]
Mere, A. [1 ]
Altosaar, M. [1 ]
Raudoja, J. [1 ]
Mellikov, E. [1 ]
机构
[1] Tallinn Univ Technol, Dept Mat Sci, EE-19086 Tallinn, Estonia
基金
美国国家科学基金会;
关键词
Cu2ZnSnSe4; Stannite; Thin films; SOLAR-CELLS; LAYERS;
D O I
10.1016/j.tsf.2011.01.388
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin layers of Sn onto Cu-Zn alloy with different component ratios were processed at different temperatures. Scrupulous comparative analyses were performed by room temperature Raman spectroscopy and X-ray-diffractometry. An excess of tin on the surface results in isothermal selenization at 450 degrees C in the hexagonal residuals of unstable SnSe2 in the well-crystallized Stannite - Cu2ZnSnSe4. In similar selenization conditions, copper-rich layers as precursors result in the Stannite phase with micro-immersions of CuSe. Low-temperature photoluminescence spectra of selenized films indicated to two Gaussian shaped bands at 0.81 and 1.16 eV. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:7394 / 7398
页数:5
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