Tip-enhanced Raman mapping of a single Ge nanowire

被引：36

作者：

Ogawa, Y. ^{[1
]}

Yuasa, Y. ^{[1
]}

Minami, F. ^{[1
]}

Oda, S. ^{[2
]}

机构：

[1] Tokyo Inst Technol, Dept Phys, Tokyo 1528551, Japan

[2] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Tokyo 1528552, Japan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 05期

关键词：

VOLUME FRACTION; SCATTERING; SPECTROSCOPY; SILICON;

D O I：

10.1063/1.3621856

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the nanometer scale mapping of a single Ge nanowire (NW) using tip-enhanced Raman scattering (TERS). The Raman spectra of a single Ge NW show downshift and asymmetric broadening, depending on the diameter, due to the phonon confinement effect. A Raman peak attributed to amorphous Ge has also been observed. Assuming the crystalline core/amorphous shell structure, we estimate the amorphous shell thickness to be 2-6 monolayers from the integrated Raman intensities of crystalline and amorphous Ge. (C) 2011 American Institute of Physics. [doi:10.1063/1.3621856]

引用

页数：3

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