Tip-enhanced Raman mapping of a single Ge nanowire

被引：36
|
作者：
Ogawa, Y. [1 ]
Yuasa, Y. [1 ]
Minami, F. [1 ]
Oda, S. [2 ]
机构：
[1] Tokyo Inst Technol, Dept Phys, Tokyo 1528551, Japan
[2] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Tokyo 1528552, Japan
来源：
APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 05期
关键词：
VOLUME FRACTION; SCATTERING; SPECTROSCOPY; SILICON;
D O I：
10.1063/1.3621856
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the nanometer scale mapping of a single Ge nanowire (NW) using tip-enhanced Raman scattering (TERS). The Raman spectra of a single Ge NW show downshift and asymmetric broadening, depending on the diameter, due to the phonon confinement effect. A Raman peak attributed to amorphous Ge has also been observed. Assuming the crystalline core/amorphous shell structure, we estimate the amorphous shell thickness to be 2-6 monolayers from the integrated Raman intensities of crystalline and amorphous Ge. (C) 2011 American Institute of Physics. [doi:10.1063/1.3621856]
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页数：3
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