Effect of Sputtered AlN Location on the Growth Mechanism of GaN

被引：6

作者：

Wu, Pei-Yu ^{[1
]}

Li, Jhen-Hong ^{[1
]}

Hsu, Lung-Hsing ^{[2
]}

Huang, Chia-Yen ^{[3
,4
]}

Cheng, Yuh-Jen ^{[5
]}

Kuo, Hao-Chung ^{[3
,4
]}

Wu, YewChung Sermon ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Inst Lighting & Energy Photon, Tainan, Taiwan

[3] Natl Chiao Tung Univ, Dept Photon, Hsinchu, Taiwan

[4] Natl Chiao Tung Univ, Inst Elect Opt Engn, Hsinchu, Taiwan

[5] Acad Sinica, Res Ctr Appl Sci, Taipei, Taiwan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2017年 / 6卷 / 09期

关键词：

LIGHT-EMITTING-DIODES; PATTERNED SAPPHIRE; NUCLEATION LAYER; EFFICIENCY;

D O I：

10.1149/2.0211709jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Patterned sapphire substrates (PSSs) have been used to enhance the performance of GaN-based light-emitting diodes (LEDs). This performance can be further improved by using an ex situ sputtered AlN nucleation layer. This improvement has been attributed to the reduction of the GaN formation on the sidewall of the cone shape pattern. In this study, four kinds of PSS samples were fabricated to investigate the effect of sputtered AlN location on the growth mechanism of GaN in detail. (c) 2017 The Electrochemical Society. All rights reserved.

引用

页码：R131 / R134

页数：4

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