Hybrid devices from single wall carbon nanotubes epitaxially grown into a semiconductor heterostructure

To take advantage of nanoscale molecular electronic components in semiconductor technology, there will be a desire to integrate new elements such as one-dimensional (1D) carbon nanotubes in conventional 2D or 3D semiconductor systems. We report on hybrid devices based on single wall carbon nanotubes encapsulated in epitaxially grown semiconductor heterostructures of GaAs/AlAs and (Ga,Mn)As below and above the carbon nanotube. In our devices the semiconductor serves as leads to the nanotubes, forming the first reported electronic hybrid nanotube-semiconductor devices.