MICROWAVE RAPID HEATING SYSTEM USING CARBON HEATING TUBE

被引:1
作者
Sameshima, T. [1 ]
Kikuchi, T. [1 ]
Uehara, T. [1 ]
Arima, T. [1 ]
Hasumi, M. [1 ]
Miyazaki, T. [1 ,2 ]
Kobayashi, G. [2 ]
Serizawa, I [3 ]
机构
[1] Tokyo Univ Agr & Technol, Grad Sch Engn, 2-24-16 Naka Cho, Koganei, Tokyo, Japan
[2] Techno Res Ltd, Koganei, Tokyo, Japan
[3] ORC MFG CO LTD, Nagano, Japan
来源
17TH INTERNATIONAL CONFERENCE ON MICROWAVE AND HIGH FREQUENCY HEATING (AMPERE 2019) | 2019年
基金
日本科学技术振兴机构;
关键词
Electromagnetic interference; Highly efficient heat treatment; PID temperature control; Silicon solar cell; CRYSTALLIZATION; SILICON;
D O I
10.4995/Ampere2019.2019.9756
中图分类号
Q6 [生物物理学];
学科分类号
071011 ;
摘要
A microwave heating system with a carbon heating tube (CHT) is reported. 2.45-GHz microwave at 200 W was introduced to a 300-dimameter metal cavity, in which the CHT made by 60-mm-long and 4-mm diameter quartz tube filled with 2-mu m diameter carbon particles and Ar gas at 1400 Pa was set at the central position. The numerical simulation with a finite element moment method demonstrated the standing wave of the electric field caused by three-dimensional Fresnel interference effect. The lowest average electric field intensity of 5 kV/m in the cavity space was achieved in the case of the electrical conductivity of carbon ranging from 10 to 55 S/m. Heating a CHT with 55 S/m was experimentally realized to 1200 degrees C by microwave irradiation at 200 W. This heating method was applied to activate 1.0x10(15)-cm(-2) boron and phosphorus implanted regions in n-type crystalline silicon substrate to fabricate pn junction and solar cells. The CHT heating at 1200 degrees C realized a solar cell characteristic with a conversion efficiency of 14.8% under illumination of air mass 1.5 at 0.1 W/cm(2).
引用
收藏
页码:318 / 325
页数:8
相关论文
共 18 条
  • [1] [Anonymous], 2009, Handbook of PI and PID Controller Tuning Rules. 3rd Edition, P4, DOI 10.1142/9781848162433_0002
  • [2] [Anonymous], 1998, FUNDAMENTAL MODERN V
  • [3] [Anonymous], 1985, PHYS SEMICONDUCTOR D
  • [4] 22.0% Efficient laser doped back contact solar cells
    Dahlinger, Morris
    Bazer-Bachi, Barbara
    Roeder, Tobias C.
    Koehler, Juergen R.
    Zapf-Gottwick, Renate
    Werner, Juergen H.
    [J]. PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2013), 2013, 38 : 250 - 253
  • [5] Commercial progress and challenges for photovoltaics
    Green, Martin A.
    [J]. NATURE ENERGY, 2016, 1
  • [6] Low temperature poly-Si TFT - Electrophoretic displays (TFT-EPDs) with four level gray scale
    Inoue, S
    Sadao, K
    Ozawa, T
    Kobashi, Y
    Kawai, H
    Kitagawa, T
    Shimoda, T
    [J]. INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, : 197 - 200
  • [7] Kaku H, 2004, 1 THIN FILM MAT DEV, P25
  • [8] Crystallization and activation of silicon by microwave rapid annealing
    Kimura, Shunsuke
    Ota, Kosuke
    Hasumi, Masahiko
    Suzuki, Ayuta
    Ushijima, Mitsuru
    Sameshima, Toshiyuki
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2016, 122 (07):
  • [9] Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon
    Mannino, G
    Stolk, PA
    Cowern, NEB
    de Boer, WB
    Dirks, AG
    Roozeboom, F
    van Berkum, JGM
    Woerlee, PH
    Toan, NN
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (07) : 889 - 891
  • [10] A WIRE-GRID MODEL FOR SCATTERING BY CONDUCTING BODIES
    RICHMOND, JH
    [J]. IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, 1966, AP14 (06) : 782 - &