Microthermal Stage for Electrothermal Characterization of Phase-Change Memory

被引：13

作者：

Lee, Jaeho ^{[1
]}

Kim, SangBum

Jeyasingh, Rakesh ^{[2
]}

Asheghi, Mehdi ^{[1
]}

Wong, H. -S. Philip ^{[2
]}

Goodson, Kenneth E. ^{[1
]}

机构：

[1] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 07期

基金：

美国国家科学基金会;

关键词：

Ge(2)Sb(2)Te(5) (GST); microthermal stage (MTS); phase-change memory (PCM); thermal conductivity; THERMAL-BOUNDARY RESISTANCE;

D O I：

10.1109/LED.2011.2144952

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter describes a novel experimental structure that captures the impact of rapid temperature transients and repetitive cycling on the thermal and electrical properties of Ge(2)Sb(2)Te(5) (GST). The microthermal stage dramatically improves the temporal resolution for heating and enables simultaneous thermal and electrical characterizations. Thermal conductivity measurements show phase transitions of GST accompanied by abrupt changes in electrical resistance. Repetitive cycling with durations down to 100 ns produces melt-quenched amorphous GST with the thermal conductivity 40% lower than that of crystalline GST. Recrystallization increases conductivity but not up to the value achieved by long-timescale bulk annealing. This is potentially because the rapidly recrystallized GST contains more disorder near the interface.

引用

收藏

页码：952 / 954

页数：3

相关论文

共 12 条

[1] Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400 °C [J].

Battaglia, J. -L. ;

Kusiak, A. ;

Schick, V. ;

Cappella, A. ;

Wiemer, C. ;

Longo, M. ;

Varesi, E. .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (04)

[2] Thermal characterization and analysis of phase change random access memory [J].

Giraud, V ;

Cluzel, J ;

Sousa, V ;

Jacquot, A ;

Dauscher, A ;

Lenoir, B ;

Scherrer, H ;

Romer, S .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (01)

[3] Thermal boundary resistance at Ge2Sb2Te5/ZnS:SiO2 interface [J].

Kim, EK ;

Kwun, SI ;

Lee, SM ;

Seo, H ;

Yoon, JG .

APPLIED PHYSICS LETTERS, 2000, 76 (26) :3864-3866

[4] Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage [J].

Kim, SangBum ;

Lee, Byoungil ;

Asheghi, Mehdi ;

Hurkx, Fred ;

Reifenberg, John P. ;

Goodson, Kenneth E. ;

Wong, H. -S. Philip .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (03) :584-592

[5] Nanometer-scale order in amorphous Ge2Sb2Te5 analyzed by fluctuation electron microscopy [J].

Kwon, Min-Ho ;

Lee, Bong-Sub ;

Bogle, Stephanie N. ;

Nittala, Lakshmi N. ;

Bishop, Stephen G. ;

Abelson, John R. ;

Raoux, Simone ;

Cheong, Byung-ki ;

Kim, Ki-Bum .

APPLIED PHYSICS LETTERS, 2007, 90 (02)

[6] Thermal conductivity anisotropy and grain structure in Ge2Sb2Te5 films [J].

Lee, Jaeho ;

Li, Zijian ;

Reifenberg, John P. ;

Lee, Sangchul ;

Sinclair, Robert ;

Asheghi, Mehdi ;

Goodson, Kenneth E. .

JOURNAL OF APPLIED PHYSICS, 2011, 109 (08)

[7] Thermal conductivity of phase-change material Ge2Sb2Te5 [J].

Lyeo, Ho-Ki ;

Cahill, David G. ;

Lee, Bong-Sub ;

Abelson, John R. ;

Kwon, Min-Ho ;

Kim, Ki-Bum ;

Bishop, Stephen G. ;

Cheong, Byung-ki .

APPLIED PHYSICS LETTERS, 2006, 89 (15)

[8] The impact of thermal boundary resistance in phase-change memory devices [J].

Reifenberg, John P. ;

Kencke, David L. ;

Goodson, Kenneth E. .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (10) :1112-1114

[9] Thickness and stoichiometry dependence of the thermal conductivity of GeSbTe films [J].

Reifenberg, John P. ;

Panzer, Matthew A. ;

Kim, SangBum ;

Gibby, Aaron M. ;

Zhang, Yuan ;

Wong, Simon ;

Wong, H.-S. Philip ;

Pop, Eric ;

Goodson, Kenneth E. .

APPLIED PHYSICS LETTERS, 2007, 91 (11)

[10] Thermal conductivities and phase transition temperatures of various phase-change materials measured by the 3ω method [J].

Risk, W. P. ;

Rettner, C. T. ;

Raoux, S. .

APPLIED PHYSICS LETTERS, 2009, 94 (10)