Direct modulation of electroluminescence from silicon nanocrystals beyond radiative recombination rates

被引：30

作者：

Carreras, Josep ^{[1
]}

Arbiol, J. ^{[1
]}

Garrido, B. ^{[1
]}

Bonafos, C. ^{[2
]}

Montserrat, J. ^{[3
]}

机构：

[1] Univ Barcelona, EME, IN2UB, E-08028 Barcelona, Spain

[2] CNRS, CEMES, nMat Grp, F-31055 Toulouse, France

[3] CSIC, IMB CNM, Bellaterra 08193, Spain

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 09期

关键词：

D O I：

10.1063/1.2889499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a light emitting transistor based on silicon nanocrystals provided with 200 Mbits/s built-in modulation. Suppression of electroluminescence from silicon nanocrystals embedded into the gate oxide of a field effect transistor is achieved by fast Auger quenching. In this process, a modulating drain signal causes heating of carriers in the channel and facilitates the charge injection into the nanocrystals. This excess of charge enables fast nonradiative processes that are used to obtain 100% modulation depths at modulating voltages of similar to 1 V. (C) 2008 American Institute of Physics.

引用

页数：3

共 20 条

[1] Ultrafast integrated semiconductor optical modulator based on the plasma-dispersion effect [J].

Almeida, VR ;

Xu, QF ;

Lipson, M .

OPTICS LETTERS, 2005, 30 (18) :2403-2405

[2] Nanocrystal memories for FLASH device applications [J].

Ammendola, G ;

Ancarani, V ;

Triolo, V ;

Bileci, M ;

Corso, D ;

Crupi, I ;

Perniola, L ;

Gerardi, C ;

Lombardo, S ;

DeSalvo, B .

SOLID-STATE ELECTRONICS, 2004, 48 (09) :1483-1488

[3]

Delerue C, 1998, SEMICONDUCT SEMIMET, V49, P253

[4] Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation [J].

Ding, L. ;

Chen, T. P. ;

Liu, Y. ;

Yang, M. ;

Wong, J. I. ;

Liu, Y. C. ;

Trigg, A. D. ;

Zhu, F. R. ;

Tan, M. C. ;

Fung, S. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (10)

[5] Simulation of hot-electron oxide tunneling current based on a non-Maxwellian electron energy distribution function [J].

Gehring, A ;

Grasser, T ;

Kosina, H ;

Selberherr, S .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (10) :6019-6027

[6] High speed silicon photonic crystal waveguide modulator for low voltage operation [J].

Gu, Lanlan ;

Jiang, Wei ;

Chen, Xiaonan ;

Wang, Li ;

Chen, Ray T. .

APPLIED PHYSICS LETTERS, 2007, 90 (07)

[7] Fast and long retention-time nano-crystal memory [J].

Hanafi, HI ;

Tiwari, S ;

Khan, I .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (09) :1553-1558

[8] Excitation and de-excitation properties of silicon quantum dots under electrical pumping [J].

Irrera, A ;

Pacifici, D ;

Miritello, M ;

Franzò, G ;

Priolo, F ;

Iacona, F ;

Sanfilippo, D ;

Di Stefano, G ;

Fallica, PG .

APPLIED PHYSICS LETTERS, 2002, 81 (10) :1866-1868

[9] Electroluminescence and transport properties in amorphous silicon nanostructures [J].

Irrera, A ;

Iacona, F ;

Crupi, I ;

Presti, CD ;

Franzò, G ;

Bongiorno, C ;

Sanfilippo, D ;

Di Stefano, G ;

Piana, A ;

Fallica, PG ;

Canino, A ;

Priolo, F .

NANOTECHNOLOGY, 2006, 17 (05) :1428-1436

[10] White electroluminescence from C- and Si-rich thin silicon oxides [J].

Jambois, O. ;

Garrido, B. ;

Pellegrino, P. ;

Carreras, Josep ;

Perez-Rodriguez, A. ;

Montserrat, J. ;

Bonafos, C. ;

BenAssayag, G. ;

Schamm, S. .

APPLIED PHYSICS LETTERS, 2006, 89 (25)

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