Role of buried cracks in mitigating strain in crack free GaN grown on Si (111) employing AlN interlayer schemes

被引：8

作者：

Tang, H. ^{[1
]}

Baribeau, J. -M. ^{[1
]}

Aers, G. C. ^{[1
]}

Fraser, J. ^{[1
]}

Rolfe, S. ^{[1
]}

Bardwell, J. A. ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 323卷 / 01期

关键词：

Molecular beam epitaxy; Gallium nitride; Strain relaxation; Buried cracks; FREE ALGAN; STRESS; RELAXATION; SILICON;

D O I：

10.1016/j.jcrysgro.2010.11.063

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper investigates the effect of buried cracks in the AlN interlayer buffer on mitigation of the large, tensile, thermal expansion mismatch strain in the GaN/Si system, which is a key hurdle for achieving crack free GaN epitaxy on silicon. The thermally induced strain is determined by temperature-dependent, high-resolution X-ray diffraction measurements carried out from room temperature up to the growth temperature. It is found that in addition to the balancing effect of compressive lattice-mismatch strain induced by the AlN interlayers, buried cracks in the AlN interlayer region can also relax some of the thermal expansion mismatch strain through elastic distortion at crack edges. The degree of relaxation is dependent on the spacing-to-height aspect ratio of the buried cracks, consistent with prediction of crack-edge-induced relaxation models. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.

引用

页码：413 / 417

页数：5

共 17 条

[1] Effect of AlN interlayers in the structure of GaN-on-Si grown by plasma-assisted MBE [J].

Adikimenakis, A. ;

Sahonta, S. -L. ;

Dimitrakopulos, G. P. ;

Domagala, J. ;

Kehagias, Th. ;

Komninou, Ph. ;

Iliopoulos, E. ;

Georgakilas, A. .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) :2010-2015

[2] Film edge-induced stress is substrates and finite films [J].

Atkinson, A ;

Johnson, T ;

Harker, AH ;

Jain, SC .

THIN SOLID FILMS, 1996, 274 (1-2) :106-112

[3] Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks [J].

Bethoux, JM ;

Vennéguès, P ;

Natali, F ;

Feltin, E ;

Tottereau, O ;

Nataf, G ;

De Mierry, P ;

Semond, F .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (10) :6499-6507

[4] The origin of stress reduction by low-temperature AlN interlayers [J].

Bläsing, J ;

Reiher, A ;

Dadgar, A ;

Diez, A ;

Krost, A .

APPLIED PHYSICS LETTERS, 2002, 81 (15) :2722-2724

[5] Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature [J].

Cordier, Y. ;

Baron, N. ;

Chenot, S. ;

Vennegues, P. ;

Tottereau, O. ;

Leroux, M. ;

Semond, F. ;

Massies, J. .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) :2002-2005

[6] Growth of blue GaN LED structures on 150-mm Si(111) [J].

Dadgar, A. ;

Hums, C. ;

Diez, A. ;

Blaesing, J. ;

Krost, A. .

JOURNAL OF CRYSTAL GROWTH, 2006, 297 (02) :279-282

[7] Strain relaxation in AlGaN under tensile plane stress [J].

Einfeldt, S ;

Kirchner, V ;

Heinke, H ;

Diesselberg, M ;

Figge, S ;

Vogeler, K ;

Hommel, D .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (12) :7029-7036

[8] Cracking of GaN films [J].

Etzkorn, EV ;

Clarke, DR .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) :1025-1034

[9] Stresses in strained GeSi stripes and quantum structures: Calculation using the finite element method and determination using micro-Raman and other measurements [J].

Jain, SC ;

Maes, HE ;

Pinardi, K .

THIN SOLID FILMS, 1997, 292 (1-2) :218-226

[10] Strain-related phenomena in GaN thin films [J].

Kisielowski, C ;

Kruger, J ;

Ruvimov, S ;

Suski, T ;

Ager, JW ;

Jones, E ;

LilientalWeber, Z ;

Rubin, M ;

Weber, ER ;

Bremser, MD ;

Davis, RF .

PHYSICAL REVIEW B, 1996, 54 (24) :17745-17753

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