Miniaturization: enabling technology for the new millenium

被引:4
作者
Razeghi, M [1 ]
Mohseni, H [1 ]
机构
[1] Northwestern Univ, Ctr Quantum Devices, Evanston, IL 60208 USA
来源
INTERNATIONAL CONFERENCE ON SOLID STATE CRYSTALS 2000: EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY | 2001年 / 4413卷
关键词
D O I
10.1117/12.425401
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The history of semiconductor devices has been characterized by a constant drive towards lower dimensions in order to increase integration density, system functionality and performance. However, this is still far fi am being comparable with the performance of natural systems such as human brain. The challenges facing semiconductor technologies in the millenium will be to move towards miniaturization. The influence of this trend on the quntum sensing of infrared radiation is one example that is elaborated here. A new generation of infrared detectors has been developed try growing layers of different semiconductors with nanometer thicknesses. The resulted badgap engineered semiconductor has superior performance compared to the bulk material. To enhance this technology further, we plan to move from quantum wells to quantum wire and quantum dots.
引用
收藏
页码:1 / 10
页数:10
相关论文
共 9 条
  • [1] PERFORMANCE LIMITATIONS OF GAAS ALGAAS INFRARED SUPERLATTICES
    KINCH, MA
    YARIV, A
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (20) : 2093 - 2095
  • [2] Uncooled InAs-GaSb type-II infrared detectors grown on GaAs substrates for the 8-12-μm atmospheric window
    Mohseni, H
    Wojkowski, J
    Razeghi, M
    Brown, G
    Mitchel, W
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (07) : 1041 - 1044
  • [3] Very long wavelength infrared type-II detectors operating at 80 K
    Mohseni, H
    Tahraoui, A
    Wojkowski, J
    Razeghi, M
    Brown, GJ
    Mitchel, WC
    Park, YS
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (11) : 1572 - 1574
  • [4] Interface-induced suppression of the Auger recombination in type-II InAs/GaSb superlattices
    Mohseni, H
    Litvinov, VI
    Razeghi, M
    [J]. PHYSICAL REVIEW B, 1998, 58 (23): : 15378 - 15380
  • [5] Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range
    Mohseni, H
    Michel, E
    Sandoen, J
    Razeghi, M
    Mitchel, W
    Brown, G
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (10) : 1403 - 1405
  • [6] MOHSENI H, 2000, SPIE, V3948, P145
  • [7] MOHSENI H, UNPUB APPL PHYS LETT
  • [8] Assessment of HgCdTe photodiodes and quantum well infrared photoconductors for long wavelength focal plane arrays
    Rogalski, A
    [J]. INFRARED PHYSICS & TECHNOLOGY, 1999, 40 (04) : 279 - 294
  • [9] NEW SEMICONDUCTOR SUPERLATTICE
    SAIHALASZ, GA
    TSU, R
    ESAKI, L
    [J]. APPLIED PHYSICS LETTERS, 1977, 30 (12) : 651 - 653