Fabrication and Characterization of Edge-Conformed Graphene-Silicon Waveguides

被引:3
|
作者
Horvath, Cameron [1 ]
Bachman, Daniel [2 ]
Mi, Guangcan [2 ]
Vien Van [2 ]
机构
[1] Appl Nanotools Inc, Edmonton, AB T5K 2M5, Canada
[2] Univ Alberta, Dept Elect Engn, Edmonton, AB T6G 2R3, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
Graphene photonics; graphene-on-silicon waveguides;
D O I
10.1109/LPT.2014.2385757
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report a simple and robust method for fabricating graphene-on-silicon waveguides on a silicon-on-insulator (SOI) chip. The waveguide consists of a silicon core covered by a graphene layer whose width exactly conforms with the width of the silicon core and whose length can be precisely controlled. Raman spectroscopy showed that the graphene layer retained its high quality after processing. Transmission measurements of fabricated graphene-on-silicon waveguides showed polarization-dependent propagation losses of 0.03 dB/mu m for the transverse-electric (TE) mode and 0.07 dB/mu m for the transverse-magnetic (TM) mode, in excellent agreement with theoretical simulations.
引用
收藏
页码:585 / 587
页数:3
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