Domain Wall Motion Across Various Grain Boundaries in Ferroelectric Thin Films

被引：42

作者：

Marincel, Daniel M. ^{[1
,2
]}

Zhang, Huairuo ^{[3
]}

Jesse, Stephen ^{[4
]}

Belianinov, Alex ^{[4
]}

Okatan, Mahmut B. ^{[4
]}

Kalinin, Sergei V. ^{[4
]}

Rainforth, W. Mark ^{[3
]}

Reaney, Ian M. ^{[3
]}

Randall, Clive A. ^{[1
,2
]}

Trolier-McKinstry, Susan ^{[1
,2
]}

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[2] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[3] Univ Sheffield, Dept Mat Sci & Engn, Sheffield S1 3JD, S Yorkshire, England

[4] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2015年 / 98卷 / 06期

基金：

英国工程与自然科学研究理事会; 美国国家科学基金会;

关键词：

BARIUM-TITANATE; ORIENTATION DEPENDENCE; ELECTRICAL-PROPERTIES; CRYSTAL ORIENTATION; SINGLE-CRYSTALS; X-RAY; BEHAVIOR; ENERGY; SIZE; TRANSFORMATION;

D O I：

10.1111/jace.13535

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Domain wall movement at and near engineered 10 degrees, 15 degrees, and 24 degrees tilt and 10 degrees and 30 degrees twist grain boundaries was measured by band excitation piezoresponse force microscopy for Pb(Zr,Ti)O-3 films with Zr/Ti ratio of 45/55 and 52/48. A minimum in nonlinear response was observed at the grain boundary for the highest angle twist and tilt grain boundaries, while a maximum in nonlinear response was observed at the 10 degrees tilt grain boundaries. The observed nonlinear response was correlated with the domain configurations imaged in cross section by transmission electron microscopy.

引用

页码：1848 / 1857

页数：10

共 50 条

[31] Domain wall motions in BST ferroelectric thin films in the microwave frequency range
Nadaud, Kevin
Borderon, Caroline
Renoud, Raphael
Ghalem, Areski
Crunteanu, Aurelian
Huitema, Laure
Dumas-Bouchiat, Frederic
Marchet, Pascal
Champeaux, Corinne
Gundel, Hartmut W.
APPLIED PHYSICS LETTERS, 2016, 109 (26)
[32] Nonlinear Dynamics of Domain-Wall Propagation in Epitaxial Ferroelectric Thin Films
Jo, J. Y.
Yang, S. M.
Kim, T. H.
Lee, H. N.
Yoon, J. -G.
Park, S.
Jo, Y.
Jung, M. H.
Noh, T. W.
PHYSICAL REVIEW LETTERS, 2009, 102 (04)
[33] Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong
An Quan Jiang
Xiang Jian Meng
David Wei Zhang
Min Hyuk Park
Sijung Yoo
Yu Jin Kim
James F. Scott
Cheol Seong Hwang
Scientific Reports, 5
[34] Humidity effect of domain wall roughening behavior in ferroelectric copolymer thin films
Park, Kwang-Won
Seo, Hosung
Kim, Jiyoon
Seol, Daehee
Hong, Jongin
Kim, Yunseok
NANOTECHNOLOGY, 2014, 25 (35)
[35] Resonant tunneling across a ferroelectric domain wall
Li, M.
Tao, L. L.
Velev, J. P.
Tsymbal, E. Y.
PHYSICAL REVIEW B, 2018, 97 (15)
[36] A diode for ferroelectric domain-wall motion
Whyte, J. R.
Gregg, J. M.
NATURE COMMUNICATIONS, 2015, 6
[37] A diode for ferroelectric domain-wall motion
J.R. Whyte
J.M. Gregg
Nature Communications, 6
[38] MOBILITY AND LOSS MECHANISMS FOR DOMAIN WALL MOTION IN THIN FERROMAGNETIC FILMS
PATTON, CE
HUMPHREY, FB
JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) : 4269 - &
[39] NONLINEAR DOMAIN-WALL MOTION IN MAGNETIC THIN-FILMS
PATTON, CE
IEEE TRANSACTIONS ON MAGNETICS, 1973, MAG9 (03) : 559 - 562
[40] Magnetic domain wall motion in SrRuO3 thin films
Zahradnik, Martin
Uhlirova, Klara
Maroutian, Thomas
Kurij, Georg
Agnus, Guillaume
Veis, Martin
Lecoeur, Philippe
MATERIALS & DESIGN, 2020, 187

← 1 2 3 4 5 →