Influences of the RF power ratio on the optical and electrical properties of GZO thin films by DC coupled RF magnetron sputtering at room temperature

被引：15

作者：

Peng, Shou ^{[1
,2
]}

Yao, Tingting ^{[1
,2
]}

Yang, Yong ^{[1
,2
]}

Zhang, Kuanxiang ^{[1
,2
]}

Jiang, Jiwen ^{[1
,2
]}

Jin, Kewu ^{[1
,2
]}

Li, Gang ^{[1
,2
]}

Cao, Xin ^{[1
,2
]}

Xu, Genbao ^{[1
,2
]}

Wang, Yun ^{[1
,2
]}

机构：

[1] State Key Lab Adv Technol Float Glass, Bengbu 233018, Peoples R China

[2] Bengbu Design & Res Inst Glass Ind, Bengbu 233018, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2016年 / 503卷

关键词：

GZO film; Sputtering power ratio; Optical property; Electrical property; Carrier mobility; Carrier concentration; SUBSTRATE-TEMPERATURE; ZNO; TRANSPARENT; DEPOSITION;

D O I：

10.1016/j.physb.2016.09.027

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Ga-doped zinc oxide (GZO) thin films were deposited by closed field unbalanced DC coupled RF magnetron sputtering system at room temperature. The RF sputtering power ratio was adjusted from 0% to 100%. The crystal structure, surface morphology, transmittance and electrical resistivity of GZO films mainly influenced by RF sputtering power ratio were investigated by X-ray diffractometer, scanning electronic microscope, ultraviolet-visible spectrophotometer and Hall effect measurement. The research results indicate that the increasing RF power ratio can effectively reduce the discharge voltage of system and increase the ionizing rate of particles. Meanwhile, the higher RF power ratio can increase the carrier mobility in GZO thin film and improve the optical and electrical properties of GZO thin film significantly. Within the optimal discharge voltage window, the film deposits at 80% RF power ratio exhibits the lowest resistivity of 2.6 x 10 (4) Omega cm. We obtain the GZO film with the best average optical transmittance is approximately 84% in the visible wavelength. With the increasing RF power ratio, the densification of GZO film is enhanced. The densification of GZO film is decrease when the RF power ratio is 100%.

引用

页码：111 / 116

页数：6

共 27 条

[1] Influence of the deposition pressure on the properties of transparent and conductive ZnO:Ga thin-film produced by r.f. sputtering at room temperature [J].