AlGaN-based solar-blind metal-semiconductor-metal photodetectors

被引：0

作者：

Shao Huimin ^{[1
]}

Zhang Shilin ^{[1
]}

Xie Sheng ^{[1
]}

Mao Luhong ^{[1
]}

Guo WeiLian ^{[1
]}

Li Xianjie

Yin Shunzheng ^{[2
]}

Feng Zhihong ^{[2
]}

Liu Bo ^{[2
]}

机构：

[1] Tianjin Univ, Sch Elect & Informat Engineer, Tianjin 300072, Peoples R China

[2] 13th Inst China Elect Technol Grp Corp, Shijiazhuang 050051, Peoples R China

来源：

2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2011年

基金：

中国国家自然科学基金;

关键词：

AlGaN; Solar-blind; Spectral Responsivity; Ultraviolet photodetector;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We reported on the fabrication and characterization of AlGaN metal-semiconductor-metal (MSM) photodetectors (PDs). AlGaN epitaxial material with an Al content of 0.6 were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). Schottky contacts were made with Ni/Pt/Au by the way of standard lift-off technique. We measured the performance of PDs. The cutoff wavelength is 276nm. Ultraviolet/visible contrast is about 3 orders of magnitude. The dark current is about 1nA at 1.5V bias and 1 mu A at 5.3V bias.

引用

页数：2

共 8 条

[1] High-detectivity nitride-based MSM photodetectors on InGaN-GaN multiquantum well with the unactivated mg-doped GaN layer [J].

Chang, Ping-Chuan ;

Yu, C. L. ;

Chang, S. J. ;

Lee, K. H. ;

Liu, C. H. ;

Wu, S. L. .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2007, 43 (11-12) :1060-1064

[2] AlGaN-based high-performance metal-semiconductor-metal photodetectors [J].

Goekkavas, Mudu ;

Butun, Serkan ;

Tut, Turgut ;

Biyikli, Necmi ;

Ozbay, Ekmel .

PHOTONICS AND NANOSTRUCTURES-FUNDAMENTALS AND APPLICATIONS, 2007, 5 (2-3) :53-62

[3] Semiconductor near-ultraviolet photoelectronics [J].

Goldberg, YA .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (07) :R41-R60

[4] AlGaN metal-semiconductor-metal photodiodes [J].

Monroy, E ;

Calle, F ;

Muñoz, E ;

Omnès, F .

APPLIED PHYSICS LETTERS, 1999, 74 (22) :3401-3403

[5]

Ozbay E., 2010, IEEE PHOT SOC 2010 2, P429

[6] Solar blind UV region and UV detector development objectives [J].

Schreiber, P ;

Dang, T ;

Pickenpaugh, T ;

Smith, G ;

Gehred, P ;

Litton, C .

PHOTODETECTORS: MATERIALS AND DEVICES IV, 1999, 3629 :230-248

[7]

SZE S.M., 2008, PHYS SEMICONDUCTOR D, P538

[8]

ZHAO Lan, 2005, AERO WEAPONRY, V5, P27

← 1 →