High speed data acquisition and pre-processing system of the photodetector linear array with through-silicon vias (TSVs) 2.5D/3D integration

被引:1
作者
Lu, H. D. [1 ]
Zhang, S. H. [1 ]
Zhang, B. [1 ]
Guo, F. M. [1 ]
Wang, M. J. [1 ]
Wang, W. [1 ]
Shen, J. H. [1 ]
机构
[1] East China Normal Univ, Shanghai Key Lab Multidimens Informat Proc, Shanghai, Peoples R China
来源
2016 IEEE 66TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2016年
关键词
QDs-QW; photodetector linear array; 3D integration; silicon substrate TSV technology; high-speed data acquisition;
D O I
10.1109/ECTC.2016.341
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We been developing a micro spectrometer with embedded system customizable for high sensitive 64 pixels QDs-QW photodetectors linear array. Based on silicon substrate through silicon via (TSV) technology, the readout circuit chip and the photodetector linear array have been packaged on 2.5D/3D integration. The high-speed data acquisition and processing analysis unit system have designed and optimize in the system. For the design requirements of the miniature spectrometer data acquisition system, the high-resolution data acquisition system was designed by using the FPGA as the controlling core, and 16 bit analog-digital convertor for data acquisition. The multi-channel system has 100 Mbps speed of the serial data link and 12 MB/s data rate transmitted to the computer. High-speed data transmission circuit with USB2.0 or wireless network, direct memory access (DMA), and the PC software of the spectral acquisition were designed and adjusted together, which realized the real-time processing of spectral data. The spectral response of the mice skin from 400 nm to 800 nm has tested and verified. The measured results indicate that the micro spectrometer system has superior performance characteristics such as small pixel size, low noise, high-speed and low power dissipation.
引用
收藏
页码:2305 / 2310
页数:6
相关论文
共 20 条
[1]  
[Anonymous], 2008, INT C INF NETW ICOIN
[2]  
Gunapala S., 1995, THIN FILMS, V21, P113
[3]  
Hao Li-chao, 2012, Proceedings of the 2012 International Conference on Measurement, Information and Control (MIC), P869, DOI 10.1109/MIC.2012.6273425
[4]   A new cryogenic CMOS readout structure for infrared focal plane array [J].
Hsieh, CC ;
Wu, CY ;
Sun, TP .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1997, 32 (08) :1192-1199
[5]   Commercialization of quantum well infrared photodetector focal plane arrays [J].
Kukkonen, CA ;
Sirangelo, MN ;
Chehayeb, R ;
Kaufmann, M ;
Liu, JK ;
Rafol, SB ;
Gunapala, SD .
INFRARED PHYSICS & TECHNOLOGY, 2001, 42 (3-5) :397-405
[6]   QUANTUM-WELL INFRARED PHOTODETECTORS [J].
LEVINE, BF .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (08) :R1-R81
[7]  
Lu Wei, 2010, P SOC PHOTO-OPT INS, V7658
[8]  
Masaki S., 2005, IEEE J SOLID-ST CIRC, V40, P11471
[9]   ACCURATE PARAMETER EXTRACTION OF HETEROJUNCTIONS BASED ON INVERSE C-V SIMULATION [J].
OGAWA, M ;
MATSUBAYASHI, H ;
OHTA, H ;
MIYOSHI, T .
SOLID-STATE ELECTRONICS, 1995, 38 (06) :1197-1207
[10]   A 60ns 500 x 12 0.35μm CMOS low-power scanning read-out IC for cryogenic infra-red sensors [J].
Serra-Graells, F ;
Misischi, B ;
Casanueva, E ;
Méndez, C ;
Terés, L .
2005 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), VOLS 1-6, CONFERENCE PROCEEDINGS, 2005, :1742-1745