Towards AlN optical cladding layers for thermal management in hybrid lasers

被引:7
|
作者
Mathews, Ian [1 ]
Lei, Shenghui [1 ]
Nolan, Kevin [1 ]
Levaufre, Guillaume [2 ,3 ]
Shen, Alexandre [2 ,3 ]
Duan, Guang-Hua [2 ,3 ]
Corbett, Brian [4 ]
Enright, Ryan [1 ]
机构
[1] Alcatel Lucent, Efficient Energy Transfer Dept, Bell Labs, Dublin, Ireland
[2] Thales Res & Technol, Alcatel Lucent Bell Labs France, III V Lab, F-91460 Marcoussis, France
[3] CEA Leti, F-91460 Marcoussis, France
[4] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland
来源
INTEGRATED PHOTONICS: MATERIALS, DEVICES, AND APPLICATIONS III | 2015年 / 9520卷
关键词
Silicon photonics; hybrid laser; aluminium nitride; magnetron sputtering; thin-film; thermal management; CONDUCTIVITY;
D O I
10.1117/12.2178924
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Aluminium Nitride (AlN) is proposed as a dual function optical cladding and thermal spreading layer for hybrid ridge lasers, replacing current benzocyclobutene (BCB) encapsulation. A high thermal conductivity material placed in intimate contact with the Multi-Quantum Well active region of the laser allows rapid heat removal at source but places a number of constraints on material selection. AN is considered the most suitable due to its high thermal conductivity when deposited at low deposition temperatures, similar co-efficient of thermal expansion to InP, its suitable refractive index and its dielectric nature. We have previously simulated the possible reduction in the thermal resistance of a hybrid ridge laser by replacing the BCB cladding material with a material of higher thermal conductivity of up to 319 W/mK. Towards this goal, we demonstrate AN thin-films deposited by reactive DC magnetron sputtering on InP.
引用
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页数:10
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