Purely Electronic Switching with High Uniformity, Resistance Tunability, and Good Retention in Pt-Dispersed SiO2 Thin Films for ReRAM

被引：101

作者：

Choi, Byung Joon ^{[1
]}

Chen, Albert B. K. ^{[1
]}

Yang, Xiang ^{[1
]}

Chen, I-Wei ^{[1
]}

机构：

[1] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 33期

基金：

美国国家科学基金会;

关键词：

MEMORY; LOCALIZATION; TRANSITION; MECHANISM; DIFFUSION; ABSENCE; MODEL; OXIDE;

D O I：

10.1002/adma.201102132

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Resistance switching memory operating by a purely electronic switching mechanism, which was first realized in Pt-dispersed SiO2 thin films, satisfies criteria including high uniformity, fast switching speed, and long retention for non-volatile memory application. This resistive element obeys Ohm's law for the area dependence, but its resistance exponentially increases with the film thickness, which provides new freedom to tailor the device characteristics.

引用

页码：3847 / +

页数：7

共 45 条

[1] SCALING THEORY OF LOCALIZATION - ABSENCE OF QUANTUM DIFFUSION IN 2 DIMENSIONS [J].

ABRAHAMS, E ;

ANDERSON, PW ;

LICCIARDELLO, DC ;

RAMAKRISHNAN, TV .

PHYSICAL REVIEW LETTERS, 1979, 42 (10) :673-676

[2] ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES [J].

ANDERSON, PW .

PHYSICAL REVIEW, 1958, 109 (05) :1492-1505

[3] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].

ANDERSON, PW .

PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955

[4] Current switching of resistive states in magnetoresistive manganites [J].

Asamitsu, A ;

Tomioka, Y ;

Kuwahara, H ;

Tokura, Y .

NATURE, 1997, 388 (6637) :50-52

[5] Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses [J].

Baek, IG ;

Lee, MS ;

Seo, S ;

Lee, MJ ;

Seo, DH ;

Suh, DS ;

Park, JC ;

Park, SO ;

Kim, HS ;

Yoo, IK ;

Chung, UI ;

Moon, JT .

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :587-590

[6] SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1979, 43 (13) :956-959

[7] Hydrogen electrochemistry and stress-induced leakage current in silica [J].

Blöchl, PE ;

Stathis, JH .

PHYSICAL REVIEW LETTERS, 1999, 83 (02) :372-375

[8] Organic materials and thin-film structures for cross-point memory cells based on trapping in metallic nanoparticles [J].

Bozano, LD ;

Kean, BW ;

Beinhoff, M ;

Carter, KR ;

Rice, PM ;

Scott, JC .

ADVANCED FUNCTIONAL MATERIALS, 2005, 15 (12) :1933-1939

[9] ENERGETICS OF DX-CENTER FORMATION IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW B, 1989, 39 (14) :10063-10074

[10] Random circuit breaker network model for unipolar resistance switching [J].

Chae, Seung Chul ;

Lee, Jae Sung ;

Kim, Sejin ;

Lee, Shin Buhm ;

Chang, Seo Hyoung ;

Liu, Chunli ;

Kahng, Byungnam ;

Shin, Hyunjung ;

Kim, Dong-Wook ;

Jung, Chang Uk ;

Seo, Sunae ;

Lee, Myoung-Jae ;

Noh, Tae Won .

ADVANCED MATERIALS, 2008, 20 (06) :1154-+

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