Plasma activated pulsed laser deposition for synthesis of particle-free La2-xSrxCuO4 films

被引：3

作者：

Yin, HQ ^{[1
]}

Ueda, Y ^{[1
]}

Arakawa, T ^{[1
]}

Kaneda, Y ^{[1
]}

Yoshikawa, T ^{[1
]}

Haneji, N ^{[1
]}

Sugahara, M ^{[1
]}

机构：

[1] Yokohama Natl Univ, Fac Engn, Dept Elect & Comp Engn, Yokohama, Kanagawa 240, Japan

来源：

THIN SOLID FILMS | 1999年 / 338卷 / 1-2期

关键词：

laser ablation; plasma processing and deposition; superconductivity; surface morphology;

D O I：

10.1016/S0040-6090(98)00889-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a new pulsed laser deposition technique named radio frequency (RF) plasma activated pulsed laser deposition. La2-xSrxCuO4 (x = 0.15) films were deposited by this method, The results of scanning electronic microscopy and atomic force microscopy observations show that particles and droplets that are usually induced by means of a normal pulsed laser deposition method are effectively reduced. Moreover, stable superconductive La2-xSrxCuO4 films can be obtained at conditions of substrate temperature 650 degrees C and at oxygen gas pressure 6.6 Pa, Based on the RF plasma process knowledge, a qualitative analysis is given to explain the observed experimental results. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：20 / 23

页数：4

共 24 条

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[24] Influence of oxygen pressure, temperature and substrate/target distance on Cu2Ta4O12 thin films prepared by pulsed-laser deposition
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