Plasma activated pulsed laser deposition for synthesis of particle-free La2-xSrxCuO4 films

被引:3
|
作者
Yin, HQ [1 ]
Ueda, Y [1 ]
Arakawa, T [1 ]
Kaneda, Y [1 ]
Yoshikawa, T [1 ]
Haneji, N [1 ]
Sugahara, M [1 ]
机构
[1] Yokohama Natl Univ, Fac Engn, Dept Elect & Comp Engn, Yokohama, Kanagawa 240, Japan
关键词
laser ablation; plasma processing and deposition; superconductivity; surface morphology;
D O I
10.1016/S0040-6090(98)00889-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report a new pulsed laser deposition technique named radio frequency (RF) plasma activated pulsed laser deposition. La2-xSrxCuO4 (x = 0.15) films were deposited by this method, The results of scanning electronic microscopy and atomic force microscopy observations show that particles and droplets that are usually induced by means of a normal pulsed laser deposition method are effectively reduced. Moreover, stable superconductive La2-xSrxCuO4 films can be obtained at conditions of substrate temperature 650 degrees C and at oxygen gas pressure 6.6 Pa, Based on the RF plasma process knowledge, a qualitative analysis is given to explain the observed experimental results. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:20 / 23
页数:4
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