Low-capacitance and fast turn-on SCR for RF ESD protection

被引:0
作者
Lin, Chun-Yu [1 ]
Ker, Ming-Dou [1 ]
Meng, Guo-Xuan [1 ]
机构
[1] Natl Chiao Tung Univ, Inst Elect, Nanoelect & Gigascale Syst Lab, Hsinchu 30039, Taiwan
关键词
electrostatic discharge (ESD); low capacitance (low-C); power amplifier (PA); radio-frequency (RF); silicon-controlled rectifier (SCR); waffle layout;
D O I
10.1093/ietele/e91-c.8.1321
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
With the smaller layout area and parasitic capacitance under the same electrostatic discharge (ESD) robustness, silicon-controlled rectifier (SCR) has been used as an effective on-chip ESD protection device in radio-frequency (RF) IC. In this paper, SCR's with the waffle layout structures are studied to minimize the parasitic capacitance and the variation of the parasitic capacitance within ultra-wide band (UWB) frequencies. With the reduced parasitic capacitance and capacitance variation, the degradation on UWB RF circuit performance can be minimized. Besides, the fast turn-on design on the low-capacitance SCR without increasing the I/O loading capacitance is investigated and applied to an UWB RF power amplifier (PA). The PA co-designed with SCR in the waffle layout structure has been fabricated. Before ESD stress, the RF performances of the ESD-protected PA are as well as that of the unprotected PA. After ESD stress, the unprotected PA is seriously degraded, whereas the ESD-protected PA still keeps the performances well.
引用
收藏
页码:1321 / 1330
页数:10
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