Hole-Transporting Materials in Inverted Planar Perovskite Solar Cells

被引:63
作者
Yan, Weibo [1 ]
Ye, Senyun [1 ]
Li, Yunlong [1 ]
Sun, Weihai [1 ]
Rao, Haixia [1 ]
Liu, Zhiwei [1 ]
Bian, Zuqiang [1 ]
Huang, Chunhui [1 ]
机构
[1] Peking Univ, Coll Chem & Mol Engn, State Key Lab Rare Earth Mat Chem & Applicat, Beijing Natl Lab Mol Sci, Beijing 100871, Peoples R China
基金
中国国家自然科学基金;
关键词
perovskite solar cells; inverted planar structures; hole-transporting materials; conductive polymers; inorganic p-type semiconductors; ORGANOLEAD HALIDE PEROVSKITE; POWER CONVERSION EFFICIENCY; HIGH-PERFORMANCE; THIN-FILM; HIGHLY EFFICIENT; P-TYPE; LOW-TEMPERATURE; GRAPHENE OXIDE; SEQUENTIAL DEPOSITION; ELECTRONIC-PROPERTIES;
D O I
10.1002/aenm.201600474
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Hybrid organic-inorganic halide-perovskite-based solar cells have achieved notable progress. A hot topic in this field is exploring inexpensive, stable and effective hole-transporting materials (HTMs) in order to improve the device performance and be favorable for large-scale production in the future. The HTMs have been proven to be an important component of perovskite solar cells, which can form selective contact being favorable for reducing charge recombination and effective hole collection, thus resulting in the enhancement of the open-circuit voltage and the fill factor. Here, an overview of the design and development of HTMs is given, mainly divided into conductive polymers, inorganic p-type semiconductors in inverted-structure-based planar perovskite solar cells. The influences of their mobility, work function and film property on device performance are discussed.
引用
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页数:20
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