Study of ion-implanted and post-annealed CVD diamond by TEM

被引:0
作者
Jiang, N
Yagyu, H
Deguchi, M
Won, JY
Mori, Y
Hatta, A
Kitabatake, M
Ito, T
Hirao, T
Sasaki, T
Hiraki, A
机构
[1] OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
[2] MATSUSHITA ELECT IND CO LTD,CENT RES LABS,KYOTO 61920,JAPAN
[3] MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN
来源
DIAMOND FILMS AND TECHNOLOGY | 1996年 / 6卷 / 05期
关键词
CVD diamond; ion implantation; H-2 plasma treatment; TEM;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A novel method has been employed for ex situ study of ion-implanted and post-annealed polycrystalline diamond by transmission electron microscopy (TEM) without reduction of specimen thickness, Chemical-vapor-deposited (CVD) diamond used for TEM study was directly deposited onto Mo TEM grids, and then implanted and post annealed. TEM images clearly revealed the existence of an ion-induced amorphous layer on the as-implanted CVD diamond surface, in which some graphite-like structures were embedded. The amorphization processes depended on the irradiation conditions. Hydrogen plasma treatment was used to anneal the as-implanted CVD diamond. High-resolution electron microscopy (HREM) images showed that hydrogen plasma treatment can effectively remove the ion-induced surface amorphous layer without diamond graphitization. After the treatment, high-density ball-like diamond blisters appeared on the surface, the average diameter of which was only about 2.5 nm, implying that the critical size for the stable existence of CVD diamond crystallites might be on the order of a few atomic layers.
引用
收藏
页码:283 / 291
页数:9
相关论文
共 15 条
  • [1] NANOMETRE-SIZED DIAMONDS ARE MORE STABLE THAN GRAPHITE
    BADZIAG, P
    VERWOERD, WS
    ELLIS, WP
    GREINER, NR
    [J]. NATURE, 1990, 343 (6255) : 244 - 245
  • [2] BRAUNSTEIN G, 1980, RADIAT EFF, V48, P138
  • [3] KALISH R, 1980, RADIAT EFF, V52, P183
  • [4] LAWSAKI N, 1991, J APPL PHYS, V69, P6361
  • [5] VOLUME EXPANSION OF ION-IMPLANTED DIAMOND
    MABY, EW
    MAGEE, CW
    MOREWOOD, JH
    [J]. APPLIED PHYSICS LETTERS, 1981, 39 (02) : 157 - 158
  • [6] EFFECT OF HYDROGEN PLASMA TREATMENT ON IMPLANTATION DAMAGE IN DIAMOND FILMS GROWN BY CHEMICAL VAPOR-DEPOSITION
    MORI, Y
    DEGUCHI, M
    EIMORI, N
    MA, JS
    NISHIMURA, K
    KITABATAKE, M
    ITO, T
    HIRAO, T
    HIRAKI, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (8B): : L1191 - L1194
  • [7] ELECTRICAL-PROPERTIES OF BORON-IMPLANTED HOMOEPITAXIAL DIAMOND FILMS
    MORI, Y
    DEGUCHI, M
    OKADA, T
    EIMORI, N
    YAGI, H
    HATTA, A
    NISHIMURA, K
    KITABATAKE, M
    ITO, T
    HIRAO, T
    SASAKI, T
    HIRAKI, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (4B): : L601 - L603
  • [8] ION-BEAM-INDUCED TRANSFORMATION OF DIAMOND
    PRAWER, S
    KALISH, R
    [J]. PHYSICAL REVIEW B, 1995, 51 (22): : 15711 - 15722
  • [9] ION-IMPLANTATION OF DIAMOND AND DIAMOND FILMS
    PRAWER, S
    [J]. DIAMOND AND RELATED MATERIALS, 1995, 4 (5-6) : 862 - 872
  • [10] PRAWER S, 1992, PHYS REV B, V45, P12736