Highly luminescence CdTe/ZnSe core-shell QDs; synthesis by a simple low temperature approach

被引：18

作者：

Farahmandzadeh, F. ^{[1
]}

Molaei, M. ^{[1
]}

Karimipour, M. ^{[1
]}

Shamsi, A. R. ^{[1
]}

机构：

[1] Vali E Asr Univ, Fac Sci, Dept Phys, Rafsanjan, Iran

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2020年 / 31卷 / 15期

关键词：

CORE/SHELL QUANTUM DOTS; PHOTOLUMINESCENCE PROPERTIES; FACILE SYNTHESIS; CDS; CDTE; NANOCRYSTALS; GROWTH; ZNSE; CONVERSION; EMISSION;

D O I：

10.1007/s10854-020-03784-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Highly luminescence CdTe/ZnSe core-shell QDs were produced by growth of the ZnSe shell using a simple, rapid, and low temperature photochemical approach around microwave synthesized CdTe QDs. Synthesized QDs were characterized by means of XRD, FESEM, HRTEM, EDAX, Raman, UV-Vis, and PL analysis. XRD, Raman, EDAX, and HRTEM analyses confirmed successful formation of ZnSe shell around CdTe QDs. CdTe QDs indicated a green band edge emission with a peak at about 535 nm. PL quantum yield (QY) was increased significantly from about 20% for CdTe to about 50% for CdTe/ZnSe QDs. The shell thickness was tunable simply only by UV-illumination time in the ZnSe shell growth step which resulted in the shift of the PL peak from 535 nm (green) to about 640 nm (red).

引用

页码：12382 / 12388

页数：7

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